BSZ0501NSIATMA1 vs BSZ0994NSATMA1 对比
详细并排对比 BSZ0501NSIATMA1 出自 Infineon 和 BSZ0994NSATMA1 出自 Infineon。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况，以确定最适合您设计需求的元器件。
规格对比
| 参数 | BSZ0501NSIATMA1 | BSZ0994NSATMA1 |
|---|---|---|
| 品牌 | Infineon | Infineon |
| 分类 | MOSFETs | MOSFETs |
| 生命周期状态 | 有效 | 有效 |
| 库存状态 | 有库存 | 有库存 |
| 单价（USD） | $0.29 | $0.31 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Part Number | BSZ0501NSIATMA1 | — |
| Product Family | OptiMOS 5 (25V/30V) | — |
| FET Type | N-Channel | — |
| Drain-Source Voltage (Vds) | 30 V | — |
| Continuous Drain Current (Id) at TA=25C | 25 A | — |
| Continuous Drain Current (Id) at TC=25C | 40 A | — |
| Power Dissipation (Pd) at TA=25C | 2.1 W | — |
| Power Dissipation (Pd) at TC=25C | 50 W | — |
| Operating Mode | Enhancement Mode | — |
| Configuration | Single with built-in diode | — |
| 封装 | PG-TSDSON-8-FL (3.3 x 3.3 mm) | PG-TSDSON-8-25 (5x6 mm) |
| 安装类型 | Surface Mount | Surface Mount |
| Number of Terminals | 8 | — |
| JESD-609 Code | e3 (matte tin) | — |
| MSL 等级 | [DATA_NEEDED: MSL rating] | 1 (per JEDEC J-STD-020) |
| Rds(on) at Vgs=10V (typ) | [DATA_NEEDED: Rds(on) value] | — |
| Gate Threshold Voltage (Vgs(th)) | [DATA_NEEDED: Vgs(th)] | — |
| Total Gate Charge (Qg) | [DATA_NEEDED: Qg] | — |
| 工作温度范围 | [DATA_NEEDED: Tj max] | -55C to +150C (junction) |
| RoHS 状态 | Compliant | Compliant |
| Series | — | OptiMOS 5 30V |
| 晶体管类型 | — | N-Channel MOSFET |
| Drain-Source Voltage (VDS) | — | 30 V |
| Continuous Drain Current (ID, Ta) | — | 13 A |
| Power Dissipation (PD, Ta) | — | 2.1 W |
| Technology | — | Trench (OptiMOS 5) |
| 引脚数 | — | 8 |
| Gate Threshold Voltage (VGS(th), typ) | — | [DATA_NEEDED: VGS(th) typ] |
| On-Resistance (RDS(on), typ @10V) | — | [DATA_NEEDED: RDS(on) typ @VGS=10V] |
| Gate Charge (Qg, typ) | — | [DATA_NEEDED: total gate charge Qg] |
| Packaging | — | Tape & Reel |