BSZ0501NSIATMA1 vs BSZ0994NSATMA1 Comparison

Detailed side-by-side comparison of BSZ0501NSIATMA1 by Infineon and BSZ0994NSATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Specification Comparison

Parameter BSZ0501NSIATMA1 BSZ0994NSATMA1
Brand Infineon Infineon
Category MOSFETs MOSFETs
Lifecycle Status Active Active
Stock Status In Stock In Stock
Unit Price (USD) $0.29 $0.31
Manufacturer Infineon Technologies Infineon Technologies
Part Number BSZ0501NSIATMA1 β€”
Product Family OptiMOS 5 (25V/30V) β€”
FET Type N-Channel β€”
Drain-Source Voltage (Vds) 30 V β€”
Continuous Drain Current (Id) at TA=25C 25 A β€”
Continuous Drain Current (Id) at TC=25C 40 A β€”
Power Dissipation (Pd) at TA=25C 2.1 W β€”
Power Dissipation (Pd) at TC=25C 50 W β€”
Operating Mode Enhancement Mode β€”
Configuration Single with built-in diode β€”
Package PG-TSDSON-8-FL (3.3 x 3.3 mm) PG-TSDSON-8-25 (5x6 mm)
Mounting Type Surface Mount Surface Mount
Number of Terminals 8 β€”
JESD-609 Code e3 (matte tin) β€”
MSL Level [DATA_NEEDED: MSL rating] 1 (per JEDEC J-STD-020)
Rds(on) at Vgs=10V (typ) [DATA_NEEDED: Rds(on) value] β€”
Gate Threshold Voltage (Vgs(th)) [DATA_NEEDED: Vgs(th)] β€”
Total Gate Charge (Qg) [DATA_NEEDED: Qg] β€”
Operating Temperature Range [DATA_NEEDED: Tj max] -55C to +150C (junction)
RoHS Status Compliant Compliant
Series β€” OptiMOS 5 30V
Transistor Type β€” N-Channel MOSFET
Drain-Source Voltage (VDS) β€” 30 V
Continuous Drain Current (ID, Ta) β€” 13 A
Power Dissipation (PD, Ta) β€” 2.1 W
Technology β€” Trench (OptiMOS 5)
Number of Pins β€” 8
Gate Threshold Voltage (VGS(th), typ) β€” [DATA_NEEDED: VGS(th) typ]
On-Resistance (RDS(on), typ @10V) β€” [DATA_NEEDED: RDS(on) typ @VGS=10V]
Gate Charge (Qg, typ) β€” [DATA_NEEDED: total gate charge Qg]
Packaging β€” Tape & Reel

Datasheets & Resources

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