BSZ0501NSIATMA1 vs BSZ215CHXTMA1 对比
详细并排对比 BSZ0501NSIATMA1 出自 Infineon 和 BSZ215CHXTMA1 出自 Infineon。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况，以确定最适合您设计需求的元器件。
规格对比
| 参数 | BSZ0501NSIATMA1 | BSZ215CHXTMA1 |
|---|---|---|
| 品牌 | Infineon | Infineon |
| 分类 | MOSFETs | MOSFETs |
| 生命周期状态 | 有效 | 有效 |
| 库存状态 | 有库存 | 有库存 |
| 单价（USD） | $0.29 | $0.36 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Part Number | BSZ0501NSIATMA1 | — |
| Product Family | OptiMOS 5 (25V/30V) | — |
| FET Type | N-Channel | N-Channel and P-Channel Complementary |
| Drain-Source Voltage (Vds) | 30 V | 20 V |
| Continuous Drain Current (Id) at TA=25C | 25 A | — |
| Continuous Drain Current (Id) at TC=25C | 40 A | — |
| Power Dissipation (Pd) at TA=25C | 2.1 W | — |
| Power Dissipation (Pd) at TC=25C | 50 W | — |
| Operating Mode | Enhancement Mode | — |
| Configuration | Single with built-in diode | — |
| 封装 | PG-TSDSON-8-FL (3.3 x 3.3 mm) | PG-TSDSON-8 (PQFN 3.3 x 3.3) |
| 安装类型 | Surface Mount | Surface Mount |
| Number of Terminals | 8 | — |
| JESD-609 Code | e3 (matte tin) | — |
| MSL 等级 | [DATA_NEEDED: MSL rating] | — |
| Rds(on) at Vgs=10V (typ) | [DATA_NEEDED: Rds(on) value] | — |
| Gate Threshold Voltage (Vgs(th)) | [DATA_NEEDED: Vgs(th)] | — |
| Total Gate Charge (Qg) | [DATA_NEEDED: Qg] | — |
| 工作温度范围 | [DATA_NEEDED: Tj max] | -55C to +150C |
| RoHS 状态 | Compliant | Compliant |
| Series | — | OptiMOS |
| Continuous Drain Current - N-channel (Id) | — | 5.1 A |
| Continuous Drain Current - P-channel (Id) | — | 3.2 A |
| Power Dissipation (Pd) | — | 2.5 W |
| On-State Resistance - N-channel max (Rds(on)) | — | [DATA_NEEDED: N-channel Rds(on)] |
| On-State Resistance - P-channel max (Rds(on)) | — | [DATA_NEEDED: P-channel Rds(on)] |
| Technology | — | OptiMOS (enhancement mode) |
| Automotive Qualification | — | AEC-Q101 qualified |
| Lead-Free | — | Yes (100% lead-free) |
| Avalanche Rated | — | Yes |