BSZ0501NSIATMA1 vs BSZ215CHXTMA1 비교
다음의 상세 나란히 비교: BSZ0501NSIATMA1 제조: Infineon 및 BSZ215CHXTMA1 제조: Infineon. 주요 사양, 전기적 파라미터, 패키징, 수명 주기 상태, 가격 및 재고를 비교하여 설계 요구 사항에 가장 적합한 부품을 결정하십시오.
사양 비교
| 파라미터 | BSZ0501NSIATMA1 | BSZ215CHXTMA1 |
|---|---|---|
| 브랜드 | Infineon | Infineon |
| 카테고리 | MOSFETs | MOSFETs |
| 수명 주기 상태 | 활성 | 활성 |
| 재고 상태 | In Stock | In Stock |
| 단가 (USD) | $0.29 | $0.36 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Part Number | BSZ0501NSIATMA1 | — |
| Product Family | OptiMOS 5 (25V/30V) | — |
| FET Type | N-Channel | N-Channel and P-Channel Complementary |
| Drain-Source Voltage (Vds) | 30 V | 20 V |
| Continuous Drain Current (Id) at TA=25C | 25 A | — |
| Continuous Drain Current (Id) at TC=25C | 40 A | — |
| Power Dissipation (Pd) at TA=25C | 2.1 W | — |
| Power Dissipation (Pd) at TC=25C | 50 W | — |
| Operating Mode | Enhancement Mode | — |
| Configuration | Single with built-in diode | — |
| 패키지 | PG-TSDSON-8-FL (3.3 x 3.3 mm) | PG-TSDSON-8 (PQFN 3.3 x 3.3) |
| 실장 유형 | Surface Mount | Surface Mount |
| Number of Terminals | 8 | — |
| JESD-609 Code | e3 (matte tin) | — |
| MSL 레벨 | [DATA_NEEDED: MSL rating] | — |
| Rds(on) at Vgs=10V (typ) | [DATA_NEEDED: Rds(on) value] | — |
| Gate Threshold Voltage (Vgs(th)) | [DATA_NEEDED: Vgs(th)] | — |
| Total Gate Charge (Qg) | [DATA_NEEDED: Qg] | — |
| 동작 온도 범위 | [DATA_NEEDED: Tj max] | -55C to +150C |
| RoHS 상태 | Compliant | Compliant |
| Series | — | OptiMOS |
| Continuous Drain Current - N-channel (Id) | — | 5.1 A |
| Continuous Drain Current - P-channel (Id) | — | 3.2 A |
| Power Dissipation (Pd) | — | 2.5 W |
| On-State Resistance - N-channel max (Rds(on)) | — | [DATA_NEEDED: N-channel Rds(on)] |
| On-State Resistance - P-channel max (Rds(on)) | — | [DATA_NEEDED: P-channel Rds(on)] |
| Technology | — | OptiMOS (enhancement mode) |
| Automotive Qualification | — | AEC-Q101 qualified |
| Lead-Free | — | Yes (100% lead-free) |
| Avalanche Rated | — | Yes |