BSZ096N10LS5ATMA1 vs BSC050NE2LSATMA1 对比

详细并排对比 BSZ096N10LS5ATMA1 出自 Infineon 和 BSC050NE2LSATMA1 出自 Infineon。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况,以确定最适合您设计需求的元器件。

Infineon
BSC050NE2LSATMA1 BSC050NE2LSATMA1 - 25V 58A N-Ch OptiMOS MOSFET | Infineon

BSC050NE2LSATMA1 - 25V 58A N-Ch OptiMOS MOSFET | Infineon

BSC050NE2LSATMA1 ✓ 量产中

规格对比

参数 BSZ096N10LS5ATMA1 BSC050NE2LSATMA1
品牌 Infineon Infineon
分类 MOSFETs MOSFETs
生命周期状态 有效 有效
库存状态 有库存 有库存
单价(USD) $0.94 $0.36
Manufacturer Infineon Technologies —
Product Family OptiMOS 5 —
Polarity N-Channel —
Drain-Source Voltage (VDS max) 100 V —
Gate-Source Voltage (VGS max) 20 V (typical) —
Continuous Drain Current (ID, TC=25 °C) 40 A —
Maximum Silicon Drain Current (ID max) 62 A —
Pulse Drain Current (ID,pulse) 160 A —
On-Resistance RDS(on) max 9.6 mΩ at VGS=10 V —
Total Power Dissipation (Ptot, TC=25 °C) 69 W —
Gate Threshold Voltage VGS(th) Logic-level (low single-volt range) —
Diode Continuous Forward Current (IS) 40 A (TC=25 °C) —
Diode Forward Voltage (VSD) 0.85 V typ, 1.2 V max at IF=20 A —
封装 PG-TSDSON-8-FL (PQFN 3.3 x 3.3 mm) PG-TDSON-8-5 (SuperSO8 5x6 mm)
安装类型 Surface Mount Surface Mount
工作温度范围 -55 °C to +150 °C (junction) -55C to +150C
Technology OptiMOS 5 trench MOSFET OptiMOS 25V (trench)
Gate Drive Logic-level compatible —
ESD Protection Yes (gate-integrated) —
RoHS 状态 Compliant Compliant
Packaging Code ATMA1 (tape and reel) —
FET Type — N-Channel
Drain-Source Voltage (V_DS) — 25 V
Continuous Drain Current (I_D) at Tc=25C — 58 A
Continuous Drain Current (I_D) at Ta=25C — 39 A
R_DS(on) max at V_GS=10V — 5 mOhm
R_DS(on) typical at V_GS=10V — 4.2 mOhm
Gate-Source Voltage (V_GS) max — [DATA_NEEDED: V_GS max rating]
Gate Threshold Voltage (V_GS(th)) — [DATA_NEEDED: V_GS(th) typical]
Power Dissipation at Ta=25C — 2.5 W
Power Dissipation at Tc=25C — 28 W

数据手册与资源

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