BSC050NE2LSATMA1 - 25V 58A N-Ch OptiMOS MOSFET | Infineon
料号： BSC050NE2LSATMA1 ✓ 量产中| 数量 | 单价 | 小计 |
|---|---|---|
| 1 | $0.95 | $0.95 |
| 10 | $0.78 | $7.80 |
| 100 | $0.55 | $55.00 |
| 500 | $0.42 | $210.00 |
| 1,000 | $0.36 | $360.00 |
BSC050NE2LSATMA1 概述
An N-channel power MOSFET is a voltage-controlled semiconductor switch in which the channel is formed by electrons (rather than holes), enabling lower on-resistance per unit silicon area than equivalent P-channel devices. Power MOSFETs sit in the device hierarchy: transistor -> FET -> MOSFET -> power MOSFET -> N-channel power MOSFET, and they are widely used as the low-side or high-side switch in synchronous buck converters, motor drivers, and load-switch circuits where fast switching and low conduction loss are required.
Key features of the BSC050NE2LSATMA1 include the OptiMOS 25V trench process for industry-leading figure-of-merit (FOM = R_DS(on) x Q_g), a logic-level gate drive threshold optimized for 4.5V/10V gate drive, an integrated Schottky-like body diode for reduced switching losses in synchronous topologies, and a low thermal resistance package (R_thJA typically below 50°C/W on 1oz copper 1in² pad). The 8-pin TDSON package includes an exposed drain pad for direct PCB thermal dissipation.
Architecturally, the device uses a stripe-trench cell design with a very thin gate oxide, giving sub-5 mOhm on-resistance at 10V V_GS while maintaining safe operating area (SOA) for hot-plug and inrush events. Avalanche-rated energy (E_AS) per the manufacturer datasheet supports rugged operation in inductive switching.
Typical applications include synchronous buck DC-DC converters for server and telecom point-of-load, USB-PD power-path OR-ing, hot-swap circuits in 12V distributed-power systems, battery protection and load switching in power tools, and high-current motor drive half-bridges in industrial automation.
Design tip: keep the gate-drive loop (gate resistor + gate-drive IC output to gate/source) physically tight to minimize parasitic inductance that can ring above V_GS(max) = ±20V during fast switching transitions. Add a 10kohm gate-source pull-down if the gate may float during controller start-up.
This page synthesizes distributor pricing as of 2026-09-13, drop-in pin-compatible alternatives, and practical design notes not consolidated on the manufacturer datasheet.
直接替换替代料： BSC050NE2LSATMA1 ——相同封装，引脚兼容。需要 PCB 改动的不同封装料号已排除。
本系列中的变体
可与以下型号直接替换的同系列型号： BSC050NE2LSATMA1 （相同外形与封装尺寸） ——差异在于 Package, Technology, Drain-Source Voltage (VDS), Operating Temperature Range, MSL Level.
快速对比工具——选择替代料号进行并排对比：
BSC010NE2LSIATMA1
✅ 直接替换 ⚠️ 规格未核验✓ 有现货
$0.92 / 个
查看数据手册 →BSC023N08NS5SCATMA1
✅ 直接替换✓ 有现货
$1.05 / 个
查看数据手册 →BSC052N08NS5ATMA1
✅ 直接替换✓ 有现货
$0.52 / 个
查看数据手册 →BSZ096N10LS5ATMA1
✅ 直接替换✓ 有现货
$0.94 / 个
查看数据手册 →NTMFS5C628NLT1G
✅ 直接替换📋 参考替代料（不在目录中）
BSC019N04NSGATMA1
✅ 直接替换✓ 有现货
$0.58 / 个
查看数据手册 →BSC050NE2LSATMA1 最大额定值与电气特性
| FET Type | N-Channel |
| Drain-Source Voltage (V_DS) | 25 V |
| Continuous Drain Current (I_D) at Tc=25C | 58 A |
| Continuous Drain Current (I_D) at Ta=25C | 39 A |
| R_DS(on) max at V_GS=10V | 5 mOhm |
| R_DS(on) typical at V_GS=10V | 4.2 mOhm |
| Power Dissipation at Ta=25C | 2.5 W |
| Power Dissipation at Tc=25C | 28 W |
| Technology | OptiMOS 25V (trench) |
| 封装 | PG-TDSON-8-5 (SuperSO8 5x6 mm) |
| 安装类型 | Surface Mount |
| 工作温度范围 | -55C to +150C |
| RoHS 状态 | Compliant |
BSC050NE2LSATMA1 引脚配置
| 引脚 1 | S — Source |
| 引脚 2 | S — Source |
| 引脚 3 | S — Source |
| 引脚 4 | S — Source |
| 引脚 5 | G — Gate |
| 引脚 6 | S — Source |
| 引脚 7 | S — Source |
| 引脚 8 | S — Source |
| 引脚 EP | D — Drain (exposed pad) |
安全工作区 (DC, Ta=25C)
典型应用
BSC050NE2LSATMA1 适用于 6 应用s: Synchronous Buck DC-DC Converter Low-Side Switch, 12V Hot-Swap and Load Switch Circuits, USB-PD Power Path and OR-ing, Battery Protection and Load Switching in Power Tools, Motor Drive Half-Bridge in Industrial Automation, LED Lighting Current Sink and Dimming Switch.
Synchronous Buck DC-DC Converter Low-Side Switch
The BSC050NE2LSATMA1 is purpose-designed as the low-side synchronous rectifier MOSFET in 12V-input synchronous buck converters for server, telecom, and industrial POL applications. Its 5 mOhm max R_DS(on) at V_GS=10V delivers conduction losses of approximately 1.8W at 19A continuous load, while the OptiMOS 25V trench technology provides low Q_g (~15nC) and Q_rr (~8nC) for switching frequencies up to 1 MHz. The SuperSO8 5x6 package's exposed drain pad enables direct PCB thermal dissipation, eliminating the need for an external heatsink in most 30A applications. Compared to using a Schottky diode for synchronous rectification, the BSC050NE2LS reduces rectifier losses by 60-70%, improving overall converter efficiency by 1-2 percentage points.
推荐
12V Hot-Swap and Load Switch Circuits
In 12V distributed-power hot-swap and electronic-circuit-breaker applications, the BSC050NE2LSATMA1 provides the main pass-MOSFET function with safe operating area (SOA) margin during inrush events. The 25V V_DS rating provides adequate headroom above 12V nominal plus transient ringing from inductive cables, while the 5 mOhm R_DS(on) keeps continuous conduction losses manageable. The OptiMOS 25V process is avalanche-rated (E_AS) per Infineon datasheet, supporting rugged hot-plug into pre-charged bulk capacitors. Designers should implement dV/dt-controlled gate turn-on (gate resistor in the 10-100 ohm range) to limit inrush di/dt, and add TVS protection if the load inductance exceeds 10 microhenry.
推荐
USB-PD Power Path and OR-ing
For USB Power Delivery (USB-PD) power-path OR-ing and source-selection switches, the BSC050NE2LSATMA1's 25V rating exceeds the 20V USB-PD maximum by 25% margin, while its 5 mOhm R_DS(on) adds minimal voltage drop at 5A/3A PD current levels. The N-channel device is typically driven by a charge-pump gate driver to fully enhance at V_GS=10V. In dual-source OR-ing configurations (USB-C + barrel jack), the BSC050NE2LS prevents reverse-current flow with body-diode turn-off, and its low R_DS(on) minimizes thermal rise in space-constrained laptop and tablet designs. The 5x6 mm footprint enables integration adjacent to USB-C connectors.
推荐
Battery Protection and Load Switching in Power Tools
In cordless power tools and battery management systems for 18V/20V max (5S Li-ion) battery packs, the BSC050NE2LSATMA1 (with appropriate derating) can serve as the load-disconnect or charge-control MOSFET in lower-voltage sub-pack segments. While its 25V V_DS is below a full 5S pack voltage (21V max), it suits 3S-4S configurations (12.6V-16.8V max) and individual cell-balancing paths. The 58A Tc-rated current capability supports high-current tool motors during stall conditions, and the OptiMOS 25V process provides avalanche ruggedness for the inductive kick from brush-motor commutation. Designers should add an external TVS for back-EMF clamping exceeding 25V.
推荐
Motor Drive Half-Bridge in Industrial Automation
In low-voltage industrial motor drive half-bridges (24V brushed DC, small BLDC, or stepper drivers), the BSC050NE2LSATMA1 paired with a P-channel high-side device forms a compact H-bridge output stage for sub-100W motor loads. Its 5 mOhm R_DS(on) minimizes conduction loss during PWM switching, while the 58A peak current handles motor inrush and stall transients. The SuperSO8 5x6 package supports reflow soldering on automated assembly lines, and the exposed thermal pad dissipates switching losses without external heatsinking at PWM frequencies below 50 kHz. Gate-drive design requires a dedicated gate driver IC (e.g., 1EDN8511BXUSA1) to provide sufficient gate current for fast switching.
推荐
LED Lighting Current Sink and Dimming Switch
In high-brightness LED lighting drivers and architectural dimming systems, the BSC050NE2LSATMA1 serves as the low-side PWM dimming switch or current-sense path element. Its 5 mOhm R_DS(on) introduces minimal voltage drop in the current path, preserving efficiency when driving 1-3A LED strings at 12V-24V. The fast switching capability (ns-scale turn-off) enables PWM dimming frequencies above 10 kHz, well above the audible band for flicker-free operation. In constant-current LED driver topologies, the BSC050NE2LS can be paired with a current-sense amplifier (e.g., INA180) for closed-loop current regulation, with the MOSFET operating in linear or saturated mode depending on architecture.
推荐
推荐产品汇总
工程参考数据： BSC050NE2LSATMA1 ——对比、设计指导和合规信息。
选型指南
与替代料对比
| 参数 | 本产品 | BSC010NE2LSIATMA1 | BSC023N08NS5SCATMA1 | BSC052N08NS5ATMA1 | NTMFS5C628NLT1G |
|---|---|---|---|---|---|
| Brand | Infineon Technologies | Infineon Technologies | Infineon Technologies | Infineon Technologies | onsemi |
| Package | PG-TDSON-8-5 (SuperSO8 5x6) | PG-TDSON-8-5 (SuperSO8 5x6) | PG-TDSON-8-5 (SuperSO8 5x6) | PG-TDSON-8-5 (SuperSO8 5x6) | DFN-5x6 (5x6 mm) |
| V_DS max (V) | 25 | 25 | 25 | 80 | 25 |
| R_DS(on) max at V_GS=10V (mOhm) | 5.0 | 1.0 | 2.3 | 5.2 | 5.0 |
| Continuous Drain Current I_D Tc=25C (A) | 58 | 100 | 78 | 60 | 50 |
| Power Dissipation Tc (W) | 28 | 39 | 31 | 42 | 25 |
| Technology | OptiMOS 25V (trench) | OptiMOS 25V | OptiMOS 25V | OptiMOS 80V | onsemi Trench |
| Operating Temperature Range (C) | -55 to +150 | -55 to +150 | -55 to +150 | -55 to +150 | -55 to +150 |
关键差异点
- Industry-leading OptiMOS 25V figure-of-merit （对比 BSC052N08NS5ATMA1)
- Lower R_DS(on) than onsemi equivalent at same current tier （对比 NTMFS5C628NLT1G)
- Higher current handling than V_DS=80V alternatives （对比 BSZ096N10LS5ATMA1)
设计说明
The BSC050NE2LSATMA1's PG-TDSON-8-5 SuperSO8 package relies on the exposed drain pad for primary heat dissipation. The datasheet's 2.5W Ta rating assumes the standard JEDEC EIA/JESD51 1oz copper 1in² test board; in real applications with 2-4oz copper and larger thermal planes, sustained dissipation can reach 5-8W at 25°C ambient. Estimated: at 30A continuous current with 5 mOhm R_DS(on), conduction loss is I² x R = 4.5W, requiring careful thermal design. Designers should maximize copper area on the drain pad, add thermal vias to inner planes, and consider airflow for sustained high-current operation.
Minimize the gate-drive loop area to reduce parasitic inductance and prevent V_GS ringing that could exceed the ±20V maximum rating. Place the gate-drive IC within 5mm of the gate pin, route gate and source-return traces directly on top of each other, and add a 10 ohm gate resistor to dampen ringing. The high di/dt switching transients (potentially 10A/ns) demand a tight power-loop layout from drain through the package to source and back to the input capacitor. Place input ceramic capacitors (10uF X7R minimum) within 2mm of the drain-source pads to minimize switching losses and voltage overshoot.
Do not operate the BSC050NE2LSATMA1 above V_DS=25V even transiently - the avalanche energy rating is designed for normal switching transients, not sustained overvoltage events. Add a TVS diode (e.g., 24V SMBJ series) across drain-source if the application includes inductive loads (motors, solenoids, transformers) where back-EMF could exceed 25V. Always include a 10kohm gate-source pull-down resistor if the gate driver output can float during MCU startup or fault conditions - floating gates can partially enhance the MOSFET, causing partial turn-on and excessive heat.
Per Infineon's PG-TDSON-8-5 land-pattern recommendation, the thermal pad should be 3.0 x 3.5 mm with an array of thermal vias (0.3mm diameter, 0.5mm pitch) connecting to inner copper planes. Solder paste stencil aperture should be 1:1 with the pad for the thermal pad to ensure proper voiding control (target <25% voiding per IPC-7093). For double-sided assembly, the BSC050NE2LS can be mounted on either side, but the bottom side typically provides better thermal coupling to inner ground/power planes.
合规信息
RoHS and REACH compliant per Infineon product page. Not AEC-Q100 qualified (standard industrial/consumer grade); for automotive applications, refer to Infineon's automotive-grade OptiMOS variants with -Q suffix.
