BSZ096N10LS5ATMA1 vs BSZ130N03LSGATMA1 对比

详细并排对比 BSZ096N10LS5ATMA1 出自 Infineon 和 BSZ130N03LSGATMA1 出自 Infineon。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况,以确定最适合您设计需求的元器件。

规格对比

参数 BSZ096N10LS5ATMA1 BSZ130N03LSGATMA1
品牌 Infineon Infineon
分类 MOSFETs MOSFETs
生命周期状态 有效 有效
库存状态 有库存 有库存
单价(USD) $0.94 $0.41
Manufacturer Infineon Technologies Infineon Technologies
Product Family OptiMOS 5 —
Polarity N-Channel —
Drain-Source Voltage (VDS max) 100 V —
Gate-Source Voltage (VGS max) 20 V (typical) —
Continuous Drain Current (ID, TC=25 °C) 40 A —
Maximum Silicon Drain Current (ID max) 62 A —
Pulse Drain Current (ID,pulse) 160 A —
On-Resistance RDS(on) max 9.6 mΩ at VGS=10 V —
Total Power Dissipation (Ptot, TC=25 °C) 69 W —
Gate Threshold Voltage VGS(th) Logic-level (low single-volt range) —
Diode Continuous Forward Current (IS) 40 A (TC=25 °C) —
Diode Forward Voltage (VSD) 0.85 V typ, 1.2 V max at IF=20 A —
封装 PG-TSDSON-8-FL (PQFN 3.3 x 3.3 mm) PG-TSDSON-8 (8-PowerTDFN, 5x6 mm)
安装类型 Surface Mount Surface Mount
工作温度范围 -55 °C to +150 °C (junction) -55 C to +150 C (junction)
Technology OptiMOS 5 trench MOSFET —
Gate Drive Logic-level compatible —
ESD Protection Yes (gate-integrated) —
RoHS 状态 Compliant Compliant
Packaging Code ATMA1 (tape and reel) —
Part Family — OptiMOS 25V / 30V
Polarity / Channel Type — N-Channel Enhancement Mode
Drain-Source Voltage (Vds) — 30 V
Continuous Drain Current (Ta=25 C) — 10 A
连续漏极电流(TC=25°C) — 35 A
On-State Resistance Rds(on) max @ Vgs=10V — 13 mOhm
Gate Threshold Voltage Vgs(th) typ @ Vds=Vgs, Id=250uA — 2.2 V
Power Dissipation (Ta) — 2.1 W
Power Dissipation (Tc) — 25 W
MSL 等级 — 1 (per JEDEC J-STD-020)
Lead-Free — Yes
无卤 — Yes
Qualification — Industrial / Commercial (non-automotive)

数据手册与资源

浏览全部产品 创建 BOM 获取报价