BSZ130N03LSGATMA1 vs BSC023N08NS5SCATMA1 对比

详细并排对比 BSZ130N03LSGATMA1 出自 Infineon 和 BSC023N08NS5SCATMA1 出自 Infineon。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况,以确定最适合您设计需求的元器件。

Infineon
BSC023N08NS5SCATMA1 BSC023N08NS5SCATMA1 - 80V, 2.3mΩ OptiMOS 5 Power MOSFET | Infineon

BSC023N08NS5SCATMA1 - 80V, 2.3mΩ OptiMOS 5 Power MOSFET | Infineon

BSC023N08NS5SCATMA1 ✓ 量产中

规格对比

参数 BSZ130N03LSGATMA1 BSC023N08NS5SCATMA1
品牌 Infineon Infineon
分类 MOSFETs MOSFETs
生命周期状态 有效 有效
库存状态 有库存 有库存
单价(USD) $0.41 $1.05
Manufacturer Infineon Technologies Infineon Technologies
Part Family OptiMOS 25V / 30V —
Polarity / Channel Type N-Channel Enhancement Mode —
Drain-Source Voltage (Vds) 30 V —
Continuous Drain Current (Ta=25 C) 10 A —
连续漏极电流(TC=25°C) 35 A —
On-State Resistance Rds(on) max @ Vgs=10V 13 mOhm —
Gate Threshold Voltage Vgs(th) typ @ Vds=Vgs, Id=250uA 2.2 V —
Power Dissipation (Ta) 2.1 W —
Power Dissipation (Tc) 25 W —
封装 PG-TSDSON-8 (8-PowerTDFN, 5x6 mm) PG-WSON-8-2 (SuperSO8 DSC)
安装类型 Surface Mount Surface Mount
工作温度范围 -55 C to +150 C (junction) —
MSL 等级 1 (per JEDEC J-STD-020) —
RoHS 状态 Compliant Compliant
Lead-Free Yes —
无卤 Yes —
Qualification Industrial / Commercial (non-automotive) —
Part Number — BSC023N08NS5SCATMA1
Technology — OptiMOS 5 (N-channel trench MOSFET)
Drain-Source Voltage (VDS) — 80 V
Continuous Drain Current (ID, Tc=25°C) — 202 A
Power Dissipation (PD, Tc=25°C) — 188 W
On-State Resistance RDS(on) typ. — 2.3 mΩ at VGS=10 V, ID=50 A
Gate Threshold Voltage VGS(th) typ. — 3.8 V
Total Gate Charge Qg — 98 nC at VGS=10 V
Input Capacitance Ciss — 6.8 nF
Output Capacitance Coss — 74 pF
Thermal Resistance RthJC — 0.72 K/W
工作结温 — -55 °C to +175 °C

数据手册与资源

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