BTH60702EPVXUMA1 vs BTS51202EKAXUMA1 对比

详细并排对比 BTH60702EPVXUMA1 出自 Infineon 和 BTS51202EKAXUMA1 出自 Infineon。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况,以确定最适合您设计需求的元器件。

Infineon
BTH60702EPVXUMA1 BTH60702EPVXUMA1 - 60 mΩ Dual High-Side Switch 1.7A | Infineon

BTH60702EPVXUMA1 - 60 mΩ Dual High-Side Switch 1.7A | Infineon

BTH60702EPVXUMA1 ✓ 量产中

规格对比

参数 BTH60702EPVXUMA1 BTS51202EKAXUMA1
品牌 Infineon Infineon
分类 Power MOSFET Drivers Power MOSFET Drivers
生命周期状态 有效 有效
库存状态 有库存 有库存
单价(USD) $1.21 $1.68
Manufacturer Infineon Technologies —
Product Family PROFET + 48V —
功能 Smart high-side power switch (dual channel, 2 x 1:1) —
On-State Resistance (typ.) 60 mΩ per channel —
Continuous Load Current (per channel) 1.7 A —
Number of Channels 2 2
Configuration 2 x 1:1 (dual independent high-side) —
晶体管类型 N-channel vertical power MOSFET with charge pump —
Nominal Operating Voltage 48 V board net —
Maximum Supply Voltage 54 V —
Load Voltage Range [DATA_NEEDED: load voltage range] —
Current Sense / Diagnosis Yes (analog current-sense output) —
Protection Features Over-load, short-circuit, over-voltage, reverse battery, thermal shutdown —
封装 PG-TSDSO-14 with exposed pad PG-DSO-14-40-EP (14-pin SOIC with exposed pad)
Operating Temperature (junction) -40 °C to +150 °C (automotive grade) —
安装类型 Surface Mount Surface Mount
MSL 等级 [DATA_NEEDED: MSL level] —
RoHS 状态 Compliant Compliant
拓扑 — Dual High-Side Switch (2 channels)
Technology — Smart6 (N-channel vertical MOSFET with charge pump)
On-State Resistance (RDS(on)) — 120 mΩ (typical per channel)
Continuous Output Current — 2 A per channel (typical 2.5 A)
Operating Voltage (Vbb) — 8 V to 18 V
Load Type — Lamps up to 1×10 W, LEDs, resistive/inductive loads
工作温度 — -40 °C to +150 °C
Maximum Power Dissipation — 1800 mW
Integrated Protection — Over-current, Short-circuit, Over-temperature, Over-voltage, Under-voltage lockout, Reverse battery
Diagnostic Output — Yes (status feedback pin)
Charge Pump — Integrated
Automotive Qualified — Yes

数据手册与资源

浏览全部产品 创建 BOM 获取报价