BTS441RGATMA1 vs IPD30N06S215ATMA2 对比

详细并排对比 BTS441RGATMA1 出自 Infineon 和 IPD30N06S215ATMA2 出自 Infineon。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况,以确定最适合您设计需求的元器件。

Infineon
BTS441RGATMA1 BTS441RGATMA1 - 17A Smart High-Side Power Switch TO-263-5

BTS441RGATMA1 - 17A Smart High-Side Power Switch TO-263-5

BTS441RGATMA1 ✓ 量产中
Infineon
IPD30N06S215ATMA2 IPD30N06S215ATMA2 - 55V 30A N-Ch OptiMOS MOSFET | Infineon

IPD30N06S215ATMA2 - 55V 30A N-Ch OptiMOS MOSFET | Infineon

IPD30N06S215ATMA2 ✓ 量产中

规格对比

参数 BTS441RGATMA1 IPD30N06S215ATMA2
品牌 Infineon Infineon
分类 Power MOSFET Drivers MOSFETs
生命周期状态 有效 有效
库存状态 有库存 有库存
单价(USD) $2.21 $0.36
Manufacturer Infineon Technologies AG Infineon Technologies
Part Number BTS441RGATMA1 —
Switch Type 1:1 N-Channel High-Side —
输出数量 1 —
Continuous Load Current 17 A —
拓扑 Smart High-Side Switch —
Input Type CMOS-compatible, ground referenced —
Diagnostics Yes (fault feedback) —
Technology Smart SIPMOS (N-channel vertical FET + charge pump) —
封装 PG-TO263-5-2 (TO-263-5) —
安装类型 Surface Mount Surface Mount
引脚数 5 —
Operating Voltage Range [DATA_NEEDED: Vbb range, e.g. 6V-42V] —
On-State Resistance (Rds(on)) [DATA_NEEDED: Rds(on) at 25 C] —
Over-Current Protection Yes (integrated) —
Thermal Protection Yes (overtemperature shutdown) —
Over-Voltage Protection Yes (inductive load clamping) —
Automotive Qualified Yes (AEC-Q100 automotive grade) —
RoHS 状态 Compliant —
Tape and Reel Quantity 1000 (per reel) —
Part Family — OptiMOS Power MOSFET
晶体管类型 — N-Channel Enhancement Mode
Drain-Source Voltage (VDS) — 55 V
Continuous Drain Current (ID, Tc) — 30 A
Power Dissipation (PD, Tc) — 136 W
封装 / 外壳 — PG-TO252-3-11 (DPAK) - 3-Pin (2+Tab)
工作温度 — -55 C to +175 C (junction)
Automotive Qualification — AEC-Q101 qualified
MSL 等级 — MSL1 (up to 260 C peak reflow)
Avalanche Tested — 100% avalanche tested
Lead-Free / RoHS — Green package (lead free), RoHS compliant
Gate Threshold Type — Logic-level compatible
Packing — Tape & Reel (T/R)

数据手册与资源

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