BTS621L1E3128ABUMA1 vs BTS723GWXUMA1 对比

详细并排对比 BTS621L1E3128ABUMA1 出自 Infineon 和 BTS723GWXUMA1 出自 Infineon。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况,以确定最适合您设计需求的元器件。

规格对比

参数 BTS621L1E3128ABUMA1 BTS723GWXUMA1
品牌 Infineon Infineon
分类 Power MOSFET Drivers Power MOSFET Drivers
生命周期状态 有效 有效
库存状态 有库存 有库存
单价(USD) $2.45 $1.24
Product Type Dual-channel smart high-side power switch (PROFET) Smart High-Side Power Switch
Number of Channels 2 (dual high-side, 1:1) 2 (dual independent high-side)
FET Topology N-Channel vertical power MOSFET with charge pump —
On-State Resistance Rds(on) 8 mΩ typical per channel —
Nominal Operating Voltage 12 V (automotive bus) —
Maximum Supply Voltage 24 V (load-dump survivable) —
Continuous Load Current 4.4 A per channel —
工作温度范围 -40 °C to +150 °C junction -40 C to +150 C (junction)
封装 PG-TO263-7-2 (D2PAK-7, exposed tab) PG-DSO-14-37 (14-pin DSO with exposed thermal pad)
安装类型 Surface Mount Surface Mount
Input Logic Compatibility CMOS-compatible, ground-referenced CMOS-compatible
Diagnostic Feedback Yes - open-load and overtemperature reporting —
Embedded Protection Overload, current limit, short-circuit, thermal shutdown, overvoltage (load dump), fast demagnetization, reverse battery —
Technology Smart SIPMOS (monolithic) Classic PROFET™ (SMART7 vertical N-channel)
RoHS / Lead-Free Compliant (Pb-free) —
Nominal Operating Voltage (Vbb) — 6 V to 24 V
Load-Dump Survivability (Vbb(load-dump)) — Up to 40 V (per Classic PROFET spec)
Continuous Load Current per Channel (I_L(nom)) — 2.5 A
On-State Resistance per Channel (R_DS(on) typ) — [DATA_NEEDED: R_DS(on) at 25 C, full datasheet requires login]
Standby Current (I_bb(off)) — Very low (a few µA typical)
Diagnostic Output — Current-mirror status / fault flag (shared)
Protection Features — Overload, short circuit, ESD, over-temperature, over-voltage (active clamp)
Inductive Load Switching — Active Zener clamp for fast demagnetization
Automotive Qualification — AEC-Q100 qualified
RoHS Compliance — Compliant

数据手册与资源

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