CGD65A055SH2 vs CGD65A055S2 对比
详细并排对比 CGD65A055SH2 出自 Cambridge GaN Devices 和 CGD65A055S2 出自 Cambridge GaN Devices。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况，以确定最适合您设计需求的元器件。
Cambridge GaN Devices
CGD65A055S2 - 650V 55mΩ GaN HEMT with ICeGaN Gate | Cambridge GaN Devices
CGD65A055S2 ✓ 量产中规格对比
| 参数 | CGD65A055SH2 | CGD65A055S2 |
|---|---|---|
| 品牌 | Cambridge GaN Devices | Cambridge GaN Devices |
| 分类 | MOSFETs | Transistors |
| 生命周期状态 | 有效 | 有效 |
| 库存状态 | 有库存 | 有库存 |
| 单价（USD） | $7.40 | $2.85 |
| Polarity | N-Channel | Single FET |
| Transistor Technology | Gallium Nitride (GaN-on-Si HEMT) | — |
| Drain-Source Voltage (VDS) | 650 V | — |
| Continuous Drain Current (ID, Tc=25°C) | 27 A | — |
| Static Drain-Source On-Resistance (RDS(on)) | 55 mΩ (typical, per family designation) | — |
| RDS(on) at specified ID/VGS | 77 mΩ at 2.2 A, VGS=12 V (per distributor data) | — |
| Gate Charge (Qg) | 4 nC at VGS=12 V | — |
| Gate-Source Voltage (VGS) Recommended | 12 V | — |
| Integrated Features | ICeGaN® Gate, Current Sense, NL³ Circuit | — |
| Operating Mode | Enhancement-mode (normally-off) | Enhancement-mode (normally-off) |
| 封装 | 16-DFN (8x8 mm) | 16-pin DFN 8x8 mm |
| 安装类型 | Surface Mount | Surface Mount |
| 工作结温 | -55 °C to +150 °C | — |
| 安装方式 | SMD/SMT | — |
| Application Target | AC-DC PFC, server SMPS, EV charging, motor drive | — |
| RoHS / Lead-Free | RoHS Compliant, Lead-Free (per distributor listing) | — |
| Manufacturer | — | Cambridge GaN Devices |
| Technology | — | GaN-on-Si HEMT (enhancement mode) |
| Drain-to-Source Voltage (VDS) | — | 650 V |
| On-Resistance (RDS(on)) | — | 55 mΩ |
| 连续漏极电流（TC=25°C） | — | 27 A |
| Gate Technology | — | ICeGaN™ (standard-driver compatible) |
| Current Sense Pin | — | Yes (integrated CS output) |
| Integrated Protection Circuit | — | NL³ (non-linear low-loss) |
| Reverse Recovery Charge (Qrr) | — | 0 nC (zero, typical for GaN) |
| Channel Type | — | N-Channel |
| RoHS 状态 | — | Compliant (lead-free) |