CGD65A055SH2 vs CGD65A055S2 비교
다음의 상세 나란히 비교: CGD65A055SH2 제조: Cambridge GaN Devices 및 CGD65A055S2 제조: Cambridge GaN Devices. 주요 사양, 전기적 파라미터, 패키징, 수명 주기 상태, 가격 및 재고를 비교하여 설계 요구 사항에 가장 적합한 부품을 결정하십시오.
Cambridge GaN Devices
CGD65A055S2 - 650V 55mΩ GaN HEMT with ICeGaN Gate | Cambridge GaN Devices
CGD65A055S2 ✓ 활성사양 비교
| 파라미터 | CGD65A055SH2 | CGD65A055S2 |
|---|---|---|
| 브랜드 | Cambridge GaN Devices | Cambridge GaN Devices |
| 카테고리 | MOSFETs | Transistors |
| 수명 주기 상태 | 활성 | 활성 |
| 재고 상태 | In Stock | In Stock |
| 단가 (USD) | $7.40 | $2.85 |
| Polarity | N-Channel | Single FET |
| Transistor Technology | Gallium Nitride (GaN-on-Si HEMT) | — |
| Drain-Source Voltage (VDS) | 650 V | — |
| Continuous Drain Current (ID, Tc=25°C) | 27 A | — |
| Static Drain-Source On-Resistance (RDS(on)) | 55 mΩ (typical, per family designation) | — |
| RDS(on) at specified ID/VGS | 77 mΩ at 2.2 A, VGS=12 V (per distributor data) | — |
| Gate Charge (Qg) | 4 nC at VGS=12 V | — |
| Gate-Source Voltage (VGS) Recommended | 12 V | — |
| Integrated Features | ICeGaN® Gate, Current Sense, NL³ Circuit | — |
| Operating Mode | Enhancement-mode (normally-off) | Enhancement-mode (normally-off) |
| 패키지 | 16-DFN (8x8 mm) | 16-pin DFN 8x8 mm |
| 실장 유형 | Surface Mount | Surface Mount |
| 동작 접합 온도 | -55 °C to +150 °C | — |
| 장착 스타일 | SMD/SMT | — |
| Application Target | AC-DC PFC, server SMPS, EV charging, motor drive | — |
| RoHS / Lead-Free | RoHS Compliant, Lead-Free (per distributor listing) | — |
| Manufacturer | — | Cambridge GaN Devices |
| Technology | — | GaN-on-Si HEMT (enhancement mode) |
| Drain-to-Source Voltage (VDS) | — | 650 V |
| On-Resistance (RDS(on)) | — | 55 mΩ |
| 연속 드레인 전류 (TC=25°C) | — | 27 A |
| Gate Technology | — | ICeGaN™ (standard-driver compatible) |
| Current Sense Pin | — | Yes (integrated CS output) |
| Integrated Protection Circuit | — | NL³ (non-linear low-loss) |
| Reverse Recovery Charge (Qrr) | — | 0 nC (zero, typical for GaN) |
| Channel Type | — | N-Channel |
| RoHS 상태 | — | Compliant (lead-free) |