DS2431G+U vs DS28EC20+ 对比

详细并排对比 DS2431G+U 出自 Analog Devices 和 DS28EC20+ 出自 Analog Devices。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况,以确定最适合您设计需求的元器件。

Analog Devices
DS2431G+U DS2431G+U - 1Kb 1-Wire EEPROM, 2-SFN Package | Analog Devices

DS2431G+U - 1Kb 1-Wire EEPROM, 2-SFN Package | Analog Devices

DS2431G+U ✓ 量产中
Analog Devices
DS28EC20+ DS28EC20+ - 20Kb 1-Wire EEPROM, TO-92-3 | Analog Devices

DS28EC20+ - 20Kb 1-Wire EEPROM, TO-92-3 | Analog Devices

DS28EC20+ ✓ 量产中

规格对比

参数 DS2431G+U DS28EC20+
品牌 Analog Devices Analog Devices
分类 Memory ICs EEPROM
生命周期状态 有效 有效
库存状态 有库存 有库存
单价(USD) $1.45 $2.05
存储器类型 EEPROM (Non-Volatile) Non-Volatile EEPROM (1-Wire)
存储容量 1 Kbit (1024 bits) 20 Kbit (20480 bit)
Memory Organization 4 pages x 256 bits (32 bytes) 80 pages × 256 bits + 1 control page
接口 1-Wire® (single-contact DQ + GND) 1-Wire (single-contact serial)
Write Cycle Time 2 µs (scratchpad write) —
Scratchpad Size 8 bytes (64 bits) 32 bytes
Unique ROM ID 64-bit (8-byte family code + 6-byte serial + CRC) —
Write Protection Per-page, selectable; EPROM-emulation mode (1→0 only) —
封装 2-SFN (6.0 mm x 6.0 mm leadless) TO-92-3 (through-hole)
工作温度 -40 °C to +85 °C -40 °C to +85 °C
Storage Temperature -55 °C to +125 °C (per datasheet Absolute Maximum Ratings) —
Supply (Parasite Power via DQ) 2.8 V to 5.25 V (pull-up VPU) —
Write Endurance [DATA_NEEDED: end-cycle write cycles] 200k cycles per page
Data Retention [DATA_NEEDED: years] >40 years
ESD Protection [DATA_NEEDED: HBM/CDM rating] —
安装类型 Surface Mount Through Hole
RoHS 状态 Compliant Compliant
Lead-Free / Halogen-Free Yes / Yes —
Standard Speed (max) — 15.4 kbps
Overdrive Speed (max) — 90 kbps
Operating VPUP Range — 2.8 V to 5.25 V (overdrive requires 4 V to 5.25 V)
Programming Time (tPROG) — 10 ms (max)
Lead-Free Status — Yes
Unique 64-bit ROM ID — Yes (factory-lasered)
Backward Compatibility — DS2433 (4 Kbit 1-Wire EEPROM)

数据手册与资源

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