EDB2432B4MA-1DAUT-F-D vs EDB1332BDBH-1DAUT-F-D 对比

详细并排对比 EDB2432B4MA-1DAUT-F-D 出自 Micron Technology 和 EDB1332BDBH-1DAUT-F-D 出自 Micron Technology。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况,以确定最适合您设计需求的元器件。

Micron Technology
EDB2432B4MA-1DAUT-F-D EDB2432B4MA-1DAUT-F-D - 2Gbit LPDDR2 SDRAM 533MHz | Micron

EDB2432B4MA-1DAUT-F-D - 2Gbit LPDDR2 SDRAM 533MHz | Micron

EDB2432B4MA-1DAUT-F-D ✓ 量产中
Micron Technology
EDB1332BDBH-1DAUT-F-D EDB1332BDBH-1DAUT-F-D - 1Gbit LPDDR2 533MHz | Micron

EDB1332BDBH-1DAUT-F-D - 1Gbit LPDDR2 533MHz | Micron

EDB1332BDBH-1DAUT-F-D ✓ 量产中

规格对比

参数 EDB2432B4MA-1DAUT-F-D EDB1332BDBH-1DAUT-F-D
品牌 Micron Technology Micron Technology
分类 Memory ICs Memory ICs
生命周期状态 有效 有效
库存状态 有库存 有库存
单价(USD) $7.43 $2.16
存储器类型 Volatile Memory - DRAM SDRAM - Mobile LPDDR2
Technology SDRAM - Mobile LPDDR2 —
存储容量 2 Gbit (64M x 32) 1 Gbit
存储组织 64M x 32 32M x 32
Clock Frequency 533 MHz 533 MHz
接口 Parallel Parallel
封装 134-VFBGA (10 x 11.5 mm) 134-VFBGA (10 x 11.5 mm)
Package Construction DDP (Double-Die Package) —
工作温度 -40C to +125C (Automotive) [DATA_NEEDED: Operating Temperature]
安装类型 Surface Mount Surface Mount
Marking Code D9WVG —
Part Status Active —
Lead-Free Status Lead free (-F suffix) —
Halogen-Free Status Halogen free (-F suffix) —
电源电压 [DATA_NEEDED: VDD/VDDQ supply voltage] —
Write Cycle Time - Word, Page [DATA_NEEDED: write cycle time] —
Core Supply Voltage — 1.2 V
Supply Voltage Range — 1.14 V to 1.95 V
Access Mode — Single Bank Page Burst
Number of Terminals — 134
Temperature Grade — Automotive
Package Shape — Rectangular
Packaging Suffix — -D (Dry Pack)
Moisture Sensitivity — Dry Pack (per -D suffix)

数据手册与资源

浏览全部产品 创建 BOM 获取报价