EDB2432B4MA-1DAUT-F-D vs EDB2432B4MA-1DAUT-F-R 对比
详细并排对比 EDB2432B4MA-1DAUT-F-D 出自 Micron Technology 和 EDB2432B4MA-1DAUT-F-R 出自 Micron Technology。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况，以确定最适合您设计需求的元器件。
Micron Technology
EDB2432B4MA-1DAUT-F-D - 2Gbit LPDDR2 SDRAM 533MHz | Micron
EDB2432B4MA-1DAUT-F-D ✓ 量产中Micron Technology
EDB2432B4MA-1DAUT-F-R - 2Gbit LPDDR2 DRAM 533MHz | Micron
EDB2432B4MA-1DAUT-F-R ✓ 量产中规格对比
| 参数 | EDB2432B4MA-1DAUT-F-D | EDB2432B4MA-1DAUT-F-R |
|---|---|---|
| 品牌 | Micron Technology | Micron Technology |
| 分类 | Memory ICs | Memory ICs |
| 生命周期状态 | 有效 | 有效 |
| 库存状态 | 有库存 | 有库存 |
| 单价（USD） | $7.43 | $13.65 |
| 存储器类型 | Volatile Memory - DRAM | LPDDR2 SDRAM (DRAM, mobile LPDDR2) |
| Technology | SDRAM - Mobile LPDDR2 | — |
| 存储容量 | 2 Gbit (64M x 32) | 2 Gbit |
| 存储组织 | 64M x 32 | 64M x 32 |
| Clock Frequency | 533 MHz | 533 MHz |
| 接口 | Parallel | Parallel |
| 封装 | 134-VFBGA (10 x 11.5 mm) | — |
| Package Construction | DDP (Double-Die Package) | — |
| 工作温度 | -40C to +125C (Automotive) | -40C to +125C |
| 安装类型 | Surface Mount | Surface Mount |
| Marking Code | D9WVG | — |
| Part Status | Active | — |
| Lead-Free Status | Lead free (-F suffix) | — |
| Halogen-Free Status | Halogen free (-F suffix) | — |
| 电源电压 | [DATA_NEEDED: VDD/VDDQ supply voltage] | — |
| Write Cycle Time - Word, Page | [DATA_NEEDED: write cycle time] | — |
| Supply Voltage (Min) | — | 1.14 V |
| Supply Voltage (Max) | — | 1.3 V |
| 封装 / 外壳 | — | 134-VFBGA (10 x 11.5 mm) |
| Die Package Configuration | — | DDP (Double Die Package) |
| Grade | — | Automotive (AUT) |
| Terminal Count | — | 134 |
| Memory Circuits | — | 1 |
| Packaging | — | Tape & Reel (TR suffix) |
| RoHS 状态 | — | [DATA_NEEDED: RoHS status] |
| MSL 等级 | — | [DATA_NEEDED: moisture sensitivity level] |