EDB5432BEBH-1DAUT-F-D vs EDB1332BDBH-1DAUT-F-D 对比
详细并排对比 EDB5432BEBH-1DAUT-F-D 出自 Micron Technology 和 EDB1332BDBH-1DAUT-F-D 出自 Micron Technology。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况，以确定最适合您设计需求的元器件。
Micron Technology
EDB5432BEBH-1DAUT-F-D - 512Mb LPDDR2 DRAM 533MHz | Micron
EDB5432BEBH-1DAUT-F-D ✓ 量产中
规格对比
| 参数 | EDB5432BEBH-1DAUT-F-D | EDB1332BDBH-1DAUT-F-D |
|---|---|---|
| 品牌 | Micron Technology | Micron Technology |
| 分类 | Memory ICs | Memory ICs |
| 生命周期状态 | 有效 | 有效 |
| 库存状态 | 有库存 | 有库存 |
| 单价（USD） | $2.45 | $2.16 |
| 存储器类型 | Mobile LPDDR2 SDRAM | SDRAM - Mobile LPDDR2 |
| 存储容量 | 512 Mbit | 1 Gbit |
| 存储组织 | 16M x 32 | 32M x 32 |
| Clock Frequency | 533 MHz | 533 MHz |
| Supply Voltage Range | 1.14 V to 1.95 V | 1.14 V to 1.95 V |
| Core Voltage | 1.2 V (typical, LPDDR2) | — |
| 接口 | Parallel | Parallel |
| 封装 | 134-VFBGA (10 x 11.5 mm) | 134-VFBGA (10 x 11.5 mm) |
| 安装类型 | Surface Mount | Surface Mount |
| Temperature Grade | Automotive | Automotive |
| Terminals | 134 balls | — |
| Terminal Form | Ball (VFBGA) | — |
| Package Shape | Rectangular | Rectangular |
| RoHS Code | Yes (D suffix, lead-free) | — |
| Part Life Cycle Code | Active | — |
| 工作温度 | [DATA_NEEDED: operating temperature range] | [DATA_NEEDED: Operating Temperature] |
| Access Time / CAS Latency | [DATA_NEEDED: CAS latency] | — |
| Standard Qty per Reel/Tray | [DATA_NEEDED: packaging standard quantity] | — |
| Core Supply Voltage | — | 1.2 V |
| Access Mode | — | Single Bank Page Burst |
| Number of Terminals | — | 134 |
| Packaging Suffix | — | -D (Dry Pack) |
| Moisture Sensitivity | — | Dry Pack (per -D suffix) |