EP1M120F484C8ES vs EP1M120F484C7ES 对比
详细并排对比 EP1M120F484C8ES 出自 Intel 和 EP1M120F484C7ES 出自 Intel。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况，以确定最适合您设计需求的元器件。
规格对比
| 参数 | EP1M120F484C8ES | EP1M120F484C7ES |
|---|---|---|
| 品牌 | Intel | Intel |
| 分类 | FPGA & CPLD | FPGA & CPLD |
| 生命周期状态 | Obsolete | 有效 |
| 库存状态 | 有库存 | 有库存 |
| 单价（USD） | $119.40 | $189.00 |
| Family | ACEX 1M | Mercury (EP1M) |
| Manufacturer | Intel (formerly Altera) | — |
| Logic Elements / Gates | 120,000 (120K gates) | — |
| Embedded Logic Cells (EABs) | 4,800 | — |
| User I/O Pins | 303 | 303 |
| 封装 | 484-ball FineLine BGA | 484-ball FCBGA / FineLine BGA |
| Speed Grade | C8 (-8 speed bin) | C7 |
| Sample Grade | ES (Engineering Sample) | — |
| Process Technology | 0.18 µm CMOS, SRAM-based | — |
| Embedded RAM | ~104 Kbits across 12 RAM blocks | — |
| PLLs | 4 enhanced PLLs | — |
| I/O Standards | LVTTL, LVCMOS, True-LVDS, PCI | — |
| Operating Voltage (Core) | [DATA_NEEDED: core VCC range] | — |
| MultiVolt I/O Support | 1.5 V / 2.5 V / 3.3 V / 5.0 V tolerant | — |
| Configuration Method | SRAM bitstream, JTAG/serial | SRAM-based, volatile (requires config device) |
| 工作温度 | [DATA_NEEDED: industrial/commercial grade temp range] | — |
| RoHS 状态 | [DATA_NEEDED] | Compliant |
| 安装类型 | Surface Mount (BGA) | Surface Mount (BGA) |
| Logic Elements | — | 120,000 |
| Logic Cells / LABs | — | 49,152 logic cells / 4,800 LABs |
| Operating Temperature Grade | — | ES (engineering sample / extended screen) |
| Integrated Transceivers | — | Yes - high-speed differential with CDR |
| On-chip Memory | — | Block RAM + distributed RAM (consult Mercury datasheet for total bits) |
| DSP Blocks | — | Hardware multiplier/accumulator blocks (consult Mercury datasheet for count) |
| Lead-Free | — | Yes |
| MSL 等级 | — | [DATA_NEEDED: MSL level from manufacturer datasheet] |