EP1M120F484C8ES vs EP1M120F484C7ES 비교
다음의 상세 나란히 비교: EP1M120F484C8ES 제조: Intel 및 EP1M120F484C7ES 제조: Intel. 주요 사양, 전기적 파라미터, 패키징, 수명 주기 상태, 가격 및 재고를 비교하여 설계 요구 사항에 가장 적합한 부품을 결정하십시오.
사양 비교
| 파라미터 | EP1M120F484C8ES | EP1M120F484C7ES |
|---|---|---|
| 브랜드 | Intel | Intel |
| 카테고리 | FPGA & CPLD | FPGA & CPLD |
| 수명 주기 상태 | Obsolete | 활성 |
| 재고 상태 | In Stock | In Stock |
| 단가 (USD) | $119.40 | $189.00 |
| Family | ACEX 1M | Mercury (EP1M) |
| Manufacturer | Intel (formerly Altera) | — |
| Logic Elements / Gates | 120,000 (120K gates) | — |
| Embedded Logic Cells (EABs) | 4,800 | — |
| User I/O Pins | 303 | 303 |
| 패키지 | 484-ball FineLine BGA | 484-ball FCBGA / FineLine BGA |
| Speed Grade | C8 (-8 speed bin) | C7 |
| Sample Grade | ES (Engineering Sample) | — |
| Process Technology | 0.18 µm CMOS, SRAM-based | — |
| Embedded RAM | ~104 Kbits across 12 RAM blocks | — |
| PLLs | 4 enhanced PLLs | — |
| I/O Standards | LVTTL, LVCMOS, True-LVDS, PCI | — |
| Operating Voltage (Core) | [DATA_NEEDED: core VCC range] | — |
| MultiVolt I/O Support | 1.5 V / 2.5 V / 3.3 V / 5.0 V tolerant | — |
| Configuration Method | SRAM bitstream, JTAG/serial | SRAM-based, volatile (requires config device) |
| 동작 온도 | [DATA_NEEDED: industrial/commercial grade temp range] | — |
| RoHS 상태 | [DATA_NEEDED] | Compliant |
| 실장 유형 | Surface Mount (BGA) | Surface Mount (BGA) |
| Logic Elements | — | 120,000 |
| Logic Cells / LABs | — | 49,152 logic cells / 4,800 LABs |
| Operating Temperature Grade | — | ES (engineering sample / extended screen) |
| Integrated Transceivers | — | Yes - high-speed differential with CDR |
| On-chip Memory | — | Block RAM + distributed RAM (consult Mercury datasheet for total bits) |
| DSP Blocks | — | Hardware multiplier/accumulator blocks (consult Mercury datasheet for count) |
| Lead-Free | — | Yes |
| MSL 레벨 | — | [DATA_NEEDED: MSL level from manufacturer datasheet] |