EP20K200CB356C8ES vs EP20K200CB356C9 对比
详细并排对比 EP20K200CB356C8ES 出自 Intel 和 EP20K200CB356C9 出自 Intel。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况，以确定最适合您设计需求的元器件。
规格对比
| 参数 | EP20K200CB356C8ES | EP20K200CB356C9 |
|---|---|---|
| 品牌 | Intel | Intel |
| 分类 | FPGA & CPLD | FPGA & CPLD |
| 生命周期状态 | 不推荐新设计 | 不推荐新设计 |
| 库存状态 | 有库存 | 有库存 |
| 单价（USD） | $178.00 | $69.95 |
| Series | APEX 20KC | — |
| Family | APEX 20KC MultiCore Interconnect FPGA | APEX 20KC |
| System Gates | 200,000 | — |
| Logic Elements / Cells | 8,320 | 8,320 |
| User I/O Count | 271 | — |
| Core Voltage | 1.8 V | 1.8 V |
| Process Technology | 0.15 µm | 0.15 μm CMOS |
| Operating Frequency (max) | 301.21 MHz | — |
| Package Type | 356-LBGA (Ball Grid Array) | 356-LBGA |
| 安装类型 | Surface Mount | Surface Mount (BGA) |
| 工作温度 | 0°C to +85°C (Commercial) | 0 °C to +85 °C (commercial, C-grade) |
| Speed Grade | C8 (8 ns) | — |
| 存储器类型 | SRAM-based, Embedded System Blocks (ESBs) | — |
| Programming Interface | JTAG / ByteBlaster / USB-Blaster | — |
| Design Software | Quartus II / MAX+PLUS II | — |
| RoHS 状态 | [DATA_NEEDED: rohs status] | [DATA_NEEDED: RoHS compliance status] |
| Embedded Memory | Yes (ESBs) | Embedded System Blocks (ESB) - dual-port RAM, ROM, CAM |
| Total RAM Bits | — | 106,496 |
| Typical Gate Count | — | 200,000 |
| Number of User I/O | — | 271 |
| Number of Logic Gates | — | [DATA_NEEDED: total usable gates] |
| Maximum Internal Frequency | — | 250 MHz |
| 引脚数 | — | 356 |
| Configuration Method | — | SRAM-based, JTAG / passive serial / passive parallel |
| 生命周期状态 | — | Not Recommended for New Designs (NRND) |