EP3SE260F1517C3N vs EP3SE260F1517C4LN 对比
详细并排对比 EP3SE260F1517C3N 出自 Intel 和 EP3SE260F1517C4LN 出自 Intel。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况，以确定最适合您设计需求的元器件。
规格对比
| 参数 | EP3SE260F1517C3N | EP3SE260F1517C4LN |
|---|---|---|
| 品牌 | Intel | Intel |
| 分类 | FPGA & CPLD | FPGA & CPLD |
| 生命周期状态 | 最后采购期 | 最后采购期 |
| 库存状态 | 有库存 | 有库存 |
| 单价（USD） | $9,850.00 | $1,450.00 |
| Family | Stratix III E | Stratix III E (Enhanced) |
| Logic Elements | 254,400 | 255,000 |
| Embedded Memory | 16,672,768 bits (16.7 Mbits) | — |
| User I/Os | 976 | — |
| DSP Blocks (18x18 Multipliers) | 816 | — |
| M9K Memory Blocks | 1,040 | — |
| Maximum Transceiver Data Rate | 600 Mbps | — |
| PLLs | 4 | — |
| Global Clock Networks | 16 | — |
| 封装 | 1517-BBGA (FCBGA) | — |
| Process Technology | 65 nm TSMC low-power CMOS | 65 nm |
| Speed Grade | C3 (commercial) | C4 |
| 工作结温 | 0 C to +85 C (commercial) | — |
| 安装类型 | Surface Mount | Surface Mount (flip-chip) |
| RoHS 状态 | Compliant | Compliant |
| External Memory Interfaces | DDR3, DDR2, QDRII+, RLDRAM2 | — |
| Series | — | Stratix III E |
| Number of LABs/CLBs | — | 10,200 |
| Total Memory Bits | — | 16,672,768 (16.67 Mbit) |
| Number of I/O | — | 976 |
| Number of Gates | — | [DATA_NEEDED: gate count not published in web data] |
| Voltage - Supply | — | 0.9 V to 1.1 V core |
| Operating Frequency | — | 375 MHz to 450 MHz (per family) |
| 封装 / 外壳 | — | 1517-BBGA, FCBGA (FC-FBGA) |
| 工作温度 | — | 0C to +85C (commercial grade per 'C' suffix) |
| 湿敏等级（MSL） | — | 3 (168 Hours) |
| Packaging | — | Tray |
| Lead-Free / Halogen-Free | — | Yes (LN suffix) |