H58G56AK6PX032N vs H58G46AK6PX033N 对比
详细并排对比 H58G56AK6PX032N 出自 SK hynix 和 H58G46AK6PX033N 出自 SK hynix。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况，以确定最适合您设计需求的元器件。
规格对比
| 参数 | H58G56AK6PX032N | H58G46AK6PX033N |
|---|---|---|
| 品牌 | SK hynix | SK hynix |
| 分类 | Memory ICs | DRAM |
| 生命周期状态 | 有效 | 有效 |
| 库存状态 | 有库存 | 有库存 |
| 单价（USD） | $11.35 | $0.00 |
| 存储器类型 | Volatile | LPDDR5 SDRAM |
| Memory Format | DRAM | — |
| Technology | LPDDR5 SDRAM | — |
| 存储容量 | 4 GB (32 Gb) | — |
| 存储组织 | 512M x 64 (x16 device configuration) | x16 |
| 数据速率 | 6400 Mbps per pin | 6400 Mbps/pin |
| Supply Voltage (VDD2 / VDDQ / VDD1) | 1.8 V / 1.05 V / 0.5 V | — |
| 接口 | Parallel | — |
| 封装 | 315-FBGA | 315-ball FBGA |
| 安装类型 | Surface Mount | Surface Mount (BGA) |
| Grade | Automotive | Automotive |
| Product Status | Active | — |
| Packaging | Tray | — |
| 工作温度 | [DATA_NEEDED: Operating Temperature] | [DATA_NEEDED: operating temperature range] |
| Clock Frequency | [DATA_NEEDED: Clock Frequency] | — |
| RoHS 状态 | [DATA_NEEDED: RoHS Status] | [DATA_NEEDED: RoHS status] |
| Density | — | 16 Gb (2 GB) |
| Interface Standard | — | JEDEC LPDDR5 |
| VDD2 Supply Voltage | — | 1.8 V |
| VDDQ Supply Voltage | — | 1.05 V |
| VDD1 (Core) Supply Voltage | — | 0.5 V |
| Application Domain | — | Mobile, automotive, industrial controllers, computing modules |
| CAS 延迟 | — | [DATA_NEEDED: CAS latency] |
| Refresh Rate | — | [DATA_NEEDED: refresh rate specification] |
| MSL 等级 | — | [DATA_NEEDED: moisture sensitivity level] |