H58G66CK8BX147N vs MT53E2G64D8TN-046 对比
详细并排对比 H58G66CK8BX147N 出自 SK hynix 和 MT53E2G64D8TN-046 出自 Micron Technology。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况，以确定最适合您设计需求的元器件。
Micron Technology
MT53E2G64D8TN-046 - 128Gbit LPDDR4X SDRAM 556-Ball | Micron
MT53E2G64D8TN-046 ✓ 量产中规格对比
| 参数 | H58G66CK8BX147N | MT53E2G64D8TN-046 |
|---|---|---|
| 品牌 | SK hynix | Micron Technology |
| 分类 | Memory ICs | Memory ICs |
| 生命周期状态 | 有效 | 有效 |
| 库存状态 | 有库存 | 有库存 |
| 单价（USD） | $34.60 | $0.00 |
| 存储器类型 | LPDDR5X SDRAM | Mobile LPDDR4X SDRAM |
| Density | 64 Gbit (8 GB) | — |
| 存储组织 | x8 (single channel) | 2G x 64 |
| Maximum Data Rate | 8533 Mbps | — |
| Supply Voltage Domain | 0.5 V to 1.8 V | — |
| Core Voltage Class | 1.05 V (LPDDR5/LPDDR5X class) | — |
| 封装 | 315-ball FBGA | 556-ball LFBGA (12.4 mm x 12.4 mm) |
| 安装类型 | Surface Mount | Surface Mount |
| Standard Compliance | JEDEC-compliant single-channel SDRAM (per SK hynix 315-ball FBGA specification) | — |
| 接口 | LPDDR5/LPDDR5X protocol | Parallel |
| Channel Configuration | Single channel (x8 or x16 capable family) | — |
| Power Management | Dynamic voltage and frequency scaling (DVFSC/DVFSQ) | — |
| Application Domain | Smartphone, AI edge, server-class mobile computing | — |
| 工作温度 | [DATA_NEEDED: Operating Temperature Range] | — |
| Refresh Scheme | LPDDR5 per-bank / all-bank refresh | — |
| RoHS 状态 | [DATA_NEEDED: RoHS Status] | [DATA_NEEDED: RoHS status] |
| 存储容量 | — | 128 Gbit (16 GB) |
| Clock Frequency | — | 2.133 GHz |
| Access Time | — | 3.5 ns |
| Speed Grade | — | -046 (4266 Mbps/pin) |
| Supply Voltage (VDD) | — | 1.1 V / 1.8 V (per variant) |
| Ball Pitch | — | [DATA_NEEDED: ball pitch] |
| Operating Temperature (AAT:C) | — | 0C to +95C |
| Operating Temperature (AIT:C) | — | -40C to +95C |
| Operating Temperature (AUT:C) | — | -40C to +105C |
| Automotive Qualification (AUT variant) | — | AEC-Q100 qualified |
| 数据总线宽度 | — | 64 bit |
| Write Cycle Time | — | 18 ns |