H58G66CK8BX147N vs MT62F3G32D8DV-023 对比
详细并排对比 H58G66CK8BX147N 出自 SK hynix 和 MT62F3G32D8DV-023 出自 Micron Technology。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况，以确定最适合您设计需求的元器件。
规格对比
| 参数 | H58G66CK8BX147N | MT62F3G32D8DV-023 |
|---|---|---|
| 品牌 | SK hynix | Micron Technology |
| 分类 | Memory ICs | Memory ICs |
| 生命周期状态 | 有效 | 有效 |
| 库存状态 | 有库存 | 有库存 |
| 单价（USD） | $34.60 | $55.70 |
| 存储器类型 | LPDDR5X SDRAM | SDRAM - Mobile LPDDR5X |
| Density | 64 Gbit (8 GB) | — |
| 存储组织 | x8 (single channel) | — |
| Maximum Data Rate | 8533 Mbps | — |
| Supply Voltage Domain | 0.5 V to 1.8 V | — |
| Core Voltage Class | 1.05 V (LPDDR5/LPDDR5X class) | — |
| 封装 | 315-ball FBGA | 315-LFBGA (12.4 mm x 15 mm) |
| 安装类型 | Surface Mount | Surface Mount |
| Standard Compliance | JEDEC-compliant single-channel SDRAM (per SK hynix 315-ball FBGA specification) | — |
| 接口 | LPDDR5/LPDDR5X protocol | LVSTL |
| Channel Configuration | Single channel (x8 or x16 capable family) | — |
| Power Management | Dynamic voltage and frequency scaling (DVFSC/DVFSQ) | — |
| Application Domain | Smartphone, AI edge, server-class mobile computing | — |
| 工作温度 | [DATA_NEEDED: Operating Temperature Range] | — |
| Refresh Scheme | LPDDR5 per-bank / all-bank refresh | — |
| RoHS 状态 | [DATA_NEEDED: RoHS Status] | Compliant (per Micron product page) |
| 存储容量 | — | 96 Gbit (12 GB) |
| Memory Organization | — | 3G x 32 |
| 数据速率 | — | 4266 Mbps/pin (4.266 GHz) |
| Memory Bus Width | — | 32 bit |
| Ball Count | — | 315 |
| Operating Temperature (WT grade) | — | -25C to +85C |
| Supply Voltage Class | — | LPDDR5X low-voltage class (per Micron datasheet) |
| Speed Grade | — | -023 (4266 Mbps) |
| Product Family | — | MT62F3G32 (LPDDR5/5X mobile DRAM) |
| Temperature Grade Codes | — | WT (wide temp commercial), IT, AT, AIT (automotive/industrial) |
| Grade Options | — | Commercial, Industrial, Automotive |