MT62F3G32D8DV-023 - 96Gb LPDDR5X SDRAM 4266Mbps | Micron
料号： MT62F3G32D8DV-023 ✓ 量产中| 数量 | 单价 | 小计 |
|---|---|---|
| 1 | $69.62 | $69.62 |
| 10 | $66.14 | $661.40 |
| 100 | $62.66 | $6,266.00 |
| 500 | $59.18 | $29,590.00 |
| 1,000 | $55.7 | $55,700.00 |
MT62F3G32D8DV-023 概述
LPDDR5X (Low Power Double Data Rate 5X) is the extended-speed evolution of the LPDDR5 JEDEC mobile DRAM standard, used across the memory hierarchy in smartphones, tablets, and edge-AI computing platforms. LPDDR SDRAM sits within the broader DRAM family alongside DDR SDRAM and GDDR, and it is distinguished by aggressively reduced supply voltages, deep power-down states, and per-bank refresh optimized for battery-powered systems.
Key features of the MT62F3G32D8DV-023 include a 96Gbit density in a single die-composed package, a 32-bit wide data bus, LVSTL signaling at 4266 Mbps per pin, and industrial temperature support in the AIT (automotive/industrial temperature) speed-grade variants. The WT (commercial wide-temperature) grade supports -25C to +85C operation per distributor listings. Backward compatibility with LPDDR5 controllers at reduced rates simplifies platform integration where LPDDR5X speed is not required.
Architecturally, the device uses Micron LPDDR5X core technology with bank-group organization, on-die termination, and dynamic voltage-frequency scaling support characteristic of the LPDDR5/5X generation, enabling high effective bandwidth of approximately 136.5 Gbps aggregate on a 32-bit bus (4266 Mbps x 32).
Typical applications include flagship smartphone and tablet main memory, AI edge accelerators, automotive infotainment and ADAS compute platforms (AIT grade), 5G modems, and high-performance IoT gateways.
Design consideration: LPDDR5X routing demands careful length matching and reference-plane discipline for the 4266 Mbps LVSTL interface; SoC controller training algorithms must be verified against Micron's speed-grade binning before locking timing parameters.
This page synthesizes distributor pricing, same-family drop-in alternatives, and practical design notes not consolidated in the manufacturer datasheet.
直接替换替代料： MT62F3G32D8DV-023 ——相同封装，引脚兼容。需要 PCB 改动的不同封装料号已排除。
本系列中的变体
可与以下型号直接替换的同系列型号： MT62F3G32D8DV-023 （相同外形与封装尺寸） ——差异在于 Interface, Memory Type, Package.
快速对比工具——选择替代料号进行并排对比：
MT62F3G32D8DV-023 AIT:C
✅ 直接替换📋 参考替代料（不在目录中）
MT62F3G32D8DV-023 IT:B
✅ 直接替换📋 参考替代料（不在目录中）
MT62F3G32D8DV-023 WT:D
✅ 直接替换📋 参考替代料（不在目录中）
MT62F3G32D8DV-023 WT:B
✅ 直接替换📋 参考替代料（不在目录中）
MT62F3G32D8DV-023 FAAT:B
✅ 直接替换📋 参考替代料（不在目录中）
MT62F3G32D8DV-023 AAT:C
✅ 直接替换📋 参考替代料（不在目录中）
MT62F3G32D8DV-023 最大额定值与电气特性
| 存储器类型 | SDRAM - Mobile LPDDR5X |
| 存储容量 | 96 Gbit (12 GB) |
| Memory Organization | 3G x 32 |
| 数据速率 | 4266 Mbps/pin (4.266 GHz) |
| 接口 | LVSTL |
| Memory Bus Width | 32 bit |
| 封装 | 315-LFBGA (12.4 mm x 15 mm) |
| Ball Count | 315 |
| 安装类型 | Surface Mount |
| Operating Temperature (WT grade) | -25C to +85C |
| Supply Voltage Class | LPDDR5X low-voltage class (per Micron datasheet) |
| Speed Grade | -023 (4266 Mbps) |
| Product Family | MT62F3G32 (LPDDR5/5X mobile DRAM) |
| Temperature Grade Codes | WT (wide temp commercial), IT, AT, AIT (automotive/industrial) |
| RoHS 状态 | Compliant (per Micron product page) |
| Grade Options | Commercial, Industrial, Automotive |
MT62F3G32D8DV-023 315-lfbga (12.4 mm x 15 mm) 引脚配置指南
MT62F3G32D8DV-023（315-lfbga (12.4 mm x 15 mm) 封装）的引脚配置。 该数字 IC 包含 GPIO、通信接口（UART、SPI、I2C）和电源引脚。请参阅制造商数据手册以了解复用引脚功能和配置选项。对嵌入式系统设计和 PCB 布局至关重要。
暂无详细引脚数据： MT62F3G32D8DV-023.
请参阅 数据手册 以查看完整引脚配置。
典型应用
MT62F3G32D8DV-023 适用于 6 应用s: Flagship Smartphone Main Memory, Automotive ADAS and Infotainment Compute, AI Edge Accelerators and Smart Vision Modules, 5G Modems and Network Gateways, Tablets and 2-in-1 Mobile Computers, Test, Measurement, and Prototyping Instruments.
Flagship Smartphone Main Memory
The MT62F3G32D8DV-023 provides 12GB of LPDDR5X main memory for flagship smartphone SoCs, delivering 4266 Mbps/pin LVSTL signaling and approximately 136.5 Gbps aggregate bandwidth on its 32-bit bus - enough to feed modern mobile CPUs, GPUs, and NPUs without memory stalls. Its 96Gbit density in a single 315-ball LFBGA (12.4 x 15 mm) package lets a two-package design reach 24GB in minimal board area. Placed on tightly length-matched fly-by CA routing with on-die termination, the -023 speed grade supports the burst lengths and deep power-down states that define LPDDR5X battery efficiency in always-on mobile workloads.
推荐
Automotive ADAS and Infotainment Compute
The AIT:C and AAT:C grades of the MT62F3G32D8DV-023 are specified for automotive and industrial temperature environments, making them suitable for ADAS sensor-fusion domain controllers and cockpit infotainment SoCs. A single package supplies 12GB at 4266 Mbps, and the AIT/AAT qualification covers the extended ambient ranges that in-vehicle electronics must survive. In a typical design the memory sits on the SoC's LPDDR5X PHY with per-byte DQS strobes and reference-VDDQ routing on a dedicated layer; the automotive grade guarantees operation where WT commercial parts would exceed their -25C to +85C envelope, eliminating thermally induced retrain failures.
推荐
AI Edge Accelerators and Smart Vision Modules
Edge-AI SoCs running multi-stream vision inference need LPDDR5X-class bandwidth to stream feature maps at frame rate. The MT62F3G32D8DV-023 provides 12GB and roughly 136.5 Gbps of peak bandwidth at 4266 Mbps, letting an NPU sustain high utilization without off-chip bottlenecks. Because the device supports dynamic frequency scaling characteristic of LPDDR5X, inference bursts can run at full speed and idle periods drop to low-power states, extending battery life in cameras and robots. The 3G x 32 organization also maps cleanly onto 32-bit PHY slices common in edge AI silicon, simplifying controller configuration and training.
推荐
5G Modems and Network Gateways
5G baseband processors and aggregation gateways buffer large in-flight packet windows that exceed on-chip SRAM, and the MT62F3G32D8DV-023 supplies 12GB of low-latency LPDDR5X buffering at 4266 Mbps per pin. LVSTL signaling with on-die termination keeps I/O power manageable during sustained line-rate traffic, while the 96Gbit depth supports multi-operator carrier aggregation workloads. In router and small-cell designs the part is typically operated in self-refresh during idle traffic periods; the deep power-down states of the LPDDR5X generation reduce standby draw for battery-backed or energy-sensitive deployments such as fixed wireless access terminals.
推荐
Tablets and 2-in-1 Mobile Computers
Tablet platforms benefit from the MT62F3G32D8DV-023's combination of 12GB density and modest PCB area: one 315-ball LFBGA (12.4 x 15 mm) replaces multiple smaller LPDDR4 packages, freeing routing channels under thin form-factor boards. At 4266 Mbps the memory sustains responsive multitasking and high-resolution display framebuffers, while LPDDR5X power states allow the OS to park memory aggressively in connected-standby. The WT grade (-25C to +85C) covers consumer operating environments, and the shared footprint with IT/B and AIT:C grades lets industrial tablet variants reuse the identical PCB with a temperature-grade swap only.
推荐
Test, Measurement, and Prototyping Instruments
High-speed digitizers and protocol analyzers stream multi-gigasample waveforms to off-chip memory, and the MT62F3G32D8DV-023's 136.5 Gbps aggregate bandwidth at 4266 Mbps makes it a cost-effective capture buffer. A single 12GB package stores deep acquisition records for post-trigger analysis, and the LVSTL interface's low swing reduces simultaneous-switching noise in instrument backplanes. For evaluation, the WT:C variant stocked at DigiKey enables immediate prototyping; production instruments can later adopt IT:B industrial grade on the same 315-ball footprint, preserving the PCB layout across commercial and extended-temperature instrument SKUs without redesign.
推荐
推荐产品汇总
工程参考数据： MT62F3G32D8DV-023 ——对比、设计指导和合规信息。
选型指南
与替代料对比
| 参数 | 本产品 | MT62F3G32D8DV-023 AIT:C | MT62F3G32D8DV-023 IT:B | MT62F3G32D8DV-023 WT:D | MT62F3G32D8DV-023 FAAT:B |
|---|---|---|---|---|---|
| Package | 315-LFBGA (12.4x15 mm) | 315-LFBGA (12.4x15) - same | 315-LFBGA (12.4x15) - same | 315-LFBGA (12.4x15) - same | 315-LFBGA (12.4x15) - same |
| Brand | Micron Technology | Micron Technology | Micron Technology | Micron Technology | Micron Technology |
| Memory Size | 96 Gbit (12 GB) | 96 Gbit (12 GB) | 96 Gbit (12 GB) | 96 Gbit (12 GB) | 96 Gbit (12 GB) |
| Organization | 3G x 32 | 3G x 32 | 3G x 32 | 3G x 32 | 3G x 32 |
| Data Rate | 4266 Mbps/pin (4.266 GHz) | 4266 Mbps/pin | 4266 Mbps/pin | 4266 Mbps/pin | 4266 Mbps/pin |
| Interface | LVSTL | LVSTL | LVSTL | LVSTL | LVSTL |
| Temperature Grade | WT (-25C to +85C, commercial wide temp) | Automotive/Industrial (AIT) | Industrial (IT) | WT (-25C to +85C), die rev D | Full Automotive (FAAT) |
| Die Revision | C (per WT:C listing) | C | B | D (newest) | B |
| Primary Market | Consumer mobile / industrial prototyping | Automotive ADAS / infotainment | Industrial / extended temp | Consumer mobile (current build) | Full automotive qualification |
关键差异点
- Automotive qualification path without redesign （对比 MT62F3G32D8DV-023 AIT:C)
- Latest die revision availability （对比 MT62F3G32D8DV-023 WT:B)
- Highest temperature robustness in family （对比 MT62F3G32D8DV-023 FAAT:B)
- LPDDR5X-generation silicon at LPDDR5 rates （对比 MT53E2G32D4DE-046)
设计说明
At 4266 Mbps/pin, LPDDR5X LVSTL signaling leaves very little timing margin. Keep CA and DQ/DQS trace-length mismatch within SoC vendor guidelines (typically a few millimeters per group), route over continuous reference planes, and avoid crossing plane splits. Use on-die termination as enabled by the controller mode registers rather than external termination. Run the SoC memory-training algorithm on every board spin and after any die-revision change (WT:B to WT:D) to re-center read/write eye margins before locking training results into production firmware.
LPDDR5X uses separated core and I/O rails per the Micron LPDDR5X power architecture; each rail requires its own tight-tolerance PMIC output with dynamic voltage scaling support to exploit frequency/voltage operating points safely. Estimated: at 4266 Mbps on 32 DQ pins, burst I/O switching current is in the amp class, so place bulk and 0.1 uF/0.01 uF decoupling capacitance directly under the 315-ball BGA power field. Verify rail sequencing against the Micron datasheet power-up table before first power-on to avoid latch-up.
Suffix codes matter: WT, IT, AT, AIT, AAT, and FAAT denote different temperature and automotive qualification levels of identical silicon. Shipping a consumer WT:C part into an automotive program fails qualification; conversely, paying FAAT pricing for a phone SKU wastes cost. Also confirm die revision acceptance with your SoC vendor's memory-compatibility list - WT:D is the newest build and most common supply, while WT:B (LCSC stock) is an older revision. Quote-based ES (engineering sample) parts must never reach production.
The 12.4 mm x 15 mm, 315-ball LFBGA uses sub-1 mm ball pitch; specify NSMD pads and follow IPC BGA fanout practices with via-in-pad or dogbone escapes per your fab capability. Because the shared footprint spans all MT62F3G32D8DV-023 grades (WT/IT/AIT/AAT/FAAT), reserve a keep-out and copper area that supports the automotive-grade reflow profile so a later grade swap needs no board change.
合规信息
RoHS compliant per Micron product page. AEC-Q100 applicability applies to AIT/AAT/FAAT automotive grade variants; WT and IT grades are consumer/industrial commercial builds.
