H5AN4G6NBJR-PBC vs MT40A256M16GE-083E 对比
详细并排对比 H5AN4G6NBJR-PBC 出自 SK hynix 和 MT40A256M16GE-083E 出自 Micron Technology。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况，以确定最适合您设计需求的元器件。
Micron Technology
MT40A256M16GE-083E - DDR4 4Gb 256Mx16 2400MHz DRAM | Micron
MT40A256M16GE-083E ✗ 停产规格对比
| 参数 | H5AN4G6NBJR-PBC | MT40A256M16GE-083E |
|---|---|---|
| 品牌 | SK hynix | Micron Technology |
| 分类 | Memory ICs | Memory ICs |
| 生命周期状态 | 有效 | 停产 |
| 库存状态 | 有库存 | 有库存 |
| 单价（USD） | $6.60 | $2.20 |
| 存储器类型 | DDR4 SDRAM | DDR4 SDRAM |
| Memory Density | 4 Gbit | — |
| 存储组织 | 256M x 16 (268435456 words x 16 bits) | 256M x 16 |
| Supply Voltage (VDD) | 1.2 V | — |
| 接口 | DDR4 (double data rate, synchronous) | Parallel |
| Package Code | TFBGA | — |
| 封装 | FBGA-96 (PBGA96), rectangular | 96-ball FBGA, 9 x 14 mm |
| Number of Terminals | 96 | — |
| 安装类型 | Surface Mount | Surface Mount |
| 特性 | Auto self-refresh, data mask, asynchronous reset, dynamic ODT, ZQ calibration, write leveling, CRC | — |
| 工作温度 | [DATA_NEEDED: temperature range for -C grade] | [DATA_NEEDED: operating temperature range] |
| Data Rate / Speed Grade | [DATA_NEEDED: speed grade PBC data rate] | — |
| CAS 延迟 | [DATA_NEEDED: CAS latency for PBC speed grade] | [DATA_NEEDED: CAS latency at DDR4-2400] |
| Process | CMOS | — |
| Lead-Free / Halogen-Free | Yes (per family datasheet, Lead-Free & Halogen-Free) | — |
| Temperature Grade | OTHER (per distributor listing) | — |
| Density | — | 4 Gbit |
| Clock Frequency | — | 1200 MHz (DDR4-2400) |
| 电源电压 | — | 1.2 V |
| Technology | — | CMOS DRAM |
| ECCN | — | EAR99 |
| Country of Origin | — | China |
| 无卤 | — | Compliant |
| Lead Free | — | Yes |
| Introduction Date | — | August 2017 |
| Lifecycle | — | Obsolete / End of Life (per distributor cross-reference data) |
| Refresh | — | [DATA_NEEDED: refresh rate] |