H5AN4G6NBJR-PBC vs MT40A256M16GE-083E Comparison

Detailed side-by-side comparison of H5AN4G6NBJR-PBC by SK hynix and MT40A256M16GE-083E by Micron Technology. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Micron Technology
MT40A256M16GE-083E MT40A256M16GE-083E - DDR4 4Gb 256Mx16 2400MHz DRAM | Micron

MT40A256M16GE-083E - DDR4 4Gb 256Mx16 2400MHz DRAM | Micron

MT40A256M16GE-083E ✗ End of Life

Specification Comparison

Parameter H5AN4G6NBJR-PBC MT40A256M16GE-083E
Brand SK hynix Micron Technology
Category Memory ICs Memory ICs
Lifecycle Status Active End of Life
Stock Status In Stock In Stock
Unit Price (USD) $6.60 $2.20
Memory Type DDR4 SDRAM DDR4 SDRAM
Memory Density 4 Gbit —
Organization 256M x 16 (268435456 words x 16 bits) 256M x 16
Supply Voltage (VDD) 1.2 V —
Interface DDR4 (double data rate, synchronous) Parallel
Package Code TFBGA —
Package FBGA-96 (PBGA96), rectangular 96-ball FBGA, 9 x 14 mm
Number of Terminals 96 —
Mounting Type Surface Mount Surface Mount
Features Auto self-refresh, data mask, asynchronous reset, dynamic ODT, ZQ calibration, write leveling, CRC —
Operating Temperature [DATA_NEEDED: temperature range for -C grade] [DATA_NEEDED: operating temperature range]
Data Rate / Speed Grade [DATA_NEEDED: speed grade PBC data rate] —
CAS Latency [DATA_NEEDED: CAS latency for PBC speed grade] [DATA_NEEDED: CAS latency at DDR4-2400]
Process CMOS —
Lead-Free / Halogen-Free Yes (per family datasheet, Lead-Free & Halogen-Free) —
Temperature Grade OTHER (per distributor listing) —
Density — 4 Gbit
Clock Frequency — 1200 MHz (DDR4-2400)
Supply Voltage — 1.2 V
Technology — CMOS DRAM
ECCN — EAR99
Country of Origin — China
Halogen Free — Compliant
Lead Free — Yes
Introduction Date — August 2017
Lifecycle — Obsolete / End of Life (per distributor cross-reference data)
Refresh — [DATA_NEEDED: refresh rate]

Datasheets & Resources

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