H5AN4G8NBJR-VKC vs H5AN4G8NBJR-UHC 对比

详细并排对比 H5AN4G8NBJR-VKC 出自 SK hynix 和 H5AN4G8NBJR-UHC 出自 SK hynix。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况,以确定最适合您设计需求的元器件。

SK hynix
H5AN4G8NBJR-VKC H5AN4G8NBJR-VKC - 4Gb DDR4-2666 SDRAM x8 | SK hynix

H5AN4G8NBJR-VKC - 4Gb DDR4-2666 SDRAM x8 | SK hynix

H5AN4G8NBJR-VKC ✓ 量产中
SK hynix
H5AN4G8NBJR-UHC H5AN4G8NBJR-UHC - 4Gb DDR4 SDRAM 2400, 1.2V | SK Hynix

H5AN4G8NBJR-UHC - 4Gb DDR4 SDRAM 2400, 1.2V | SK Hynix

H5AN4G8NBJR-UHC ✓ 量产中

规格对比

参数 H5AN4G8NBJR-VKC H5AN4G8NBJR-UHC
品牌 SK hynix SK hynix
分类 Memory ICs Memory ICs
生命周期状态 有效 有效
库存状态 有库存 有库存
单价(USD) $2.40 $3.18
存储器类型 DDR4 SDRAM DDR4 SDRAM
存储容量 4 Gb —
Memory Organization 512M x8 —
数据速率 2666 Mbps (DDR4-2666) 2400 Mbps (PC2400)
Memory Interface Parallel —
Supply Voltage (VDD) 1.2 V —
封装 FBGA-78 (7.5 x 11 mm) TFBGA-78 (11 x 7.5 mm)
安装类型 Surface Mount Surface Mount
Technology CMOS DRAM CMOS DRAM
Volatile / Non-Volatile Volatile —
工作温度 [DATA_NEEDED: operating temperature range] [DATA_NEEDED: operating temperature range]
CAS 延迟 [DATA_NEEDED: CAS latency for 2666 grade] [DATA_NEEDED: CAS latency for -UHC speed bin]
Refresh [DATA_NEEDED: refresh rate] [DATA_NEEDED: refresh rate 1x/2x/4x support]
RoHS 状态 Compliant (Lead-Free & Halogen-Free per datasheet) Compliant (Rohs Code: Yes)
Packaging Tray —
生命周期状态 Active —
Density — 4 Gbit
存储组织 — 512M x 8
电源电压 — 1.2 V
接口 — DDR4 (JEDEC)
Lifecycle Code — Active
REACH Compliance — Compliant
Manufacturer — SK Hynix Inc.

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