H5AN8G4NAFR-PBC vs H5AN8G6NCJR-PBC 对比
详细并排对比 H5AN8G4NAFR-PBC 出自 SK hynix 和 H5AN8G6NCJR-PBC 出自 SK hynix。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况，以确定最适合您设计需求的元器件。
规格对比
| 参数 | H5AN8G4NAFR-PBC | H5AN8G6NCJR-PBC |
|---|---|---|
| 品牌 | SK hynix | SK hynix |
| 分类 | DRAM | Memory ICs |
| 生命周期状态 | 有效 | 有效 |
| 库存状态 | 有库存 | 有库存 |
| 单价（USD） | $3.55 | $3.30 |
| 存储器类型 | DDR4 SDRAM | DDR4 SDRAM |
| Density | 8 Gb | — |
| 存储组织 | 2Gb x 4 | — |
| Interface Voltage (VDD/VDDQ) | 1.2 V +/- 0.06 V | — |
| Wordline Pump Voltage (VPP) | 2.5 V (+0.25/-0.125 V) | — |
| Speed Bins (per datasheet) | DDR4-1600 / 1866 / 2133 / 2400 (DLL ON) | — |
| Bank Groups | 4 (BG0-BG1) | — |
| Banks | 16 (4 bank groups x 4 banks) | — |
| Row Address | A0-A16 (17 bits) | — |
| 封装 | 78-ball FBGA | FBGA-96 (96-ball fine-pitch BGA) |
| 安装类型 | Surface Mount | Surface Mount |
| Technology | CMOS | — |
| Lead-Free / Halogen-Free | Yes (RoHS Compliant per datasheet) | Yes (family datasheet: Lead-Free & Halogen-Free, RoHS compliant) |
| RoHS 状态 | Compliant | Compliant |
| 工作温度范围 | [DATA_NEEDED: operating temperature range] | — |
| CAS 延迟 | [DATA_NEEDED: CL for PBC speed bin] | — |
| Geardown Mode Note | DDR4-1600/1866/2133/2400 bins valid only when Geardown Mode is disabled | — |
| Memory Organization | — | 8Gb x16 (512M x 16) |
| 存储容量 | — | 8 Gbit |
| 数据速率 | — | [DATA_NEEDED: exact speed grade of -PBC suffix] |
| Family Data Rate Range | — | Up to 2666 Mbps (family: H5AN8G6NCJR-xxC) |
| Supply Voltage (VDD) | — | 1.2 V |
| 工作温度 | — | 0C to +95C |
| 接口 | — | Parallel, synchronous to both clock edges |
| Auto Self-Refresh | — | Yes |
| Auto Precharge | — | Yes |
| Asynchronous Reset | — | Yes |
| Data Mask Function | — | Yes |
| Write Leveling | — | Yes |
| CRC Function | — | Yes |
| Dynamic On-Die Termination (ODT) | — | Yes |
| ZQ Calibration | — | Yes |