H5AN8G4NAFR-UHC vs H5AN8G4NAFR-PBC 对比

详细并排对比 H5AN8G4NAFR-UHC 出自 SK hynix 和 H5AN8G4NAFR-PBC 出自 SK hynix。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况,以确定最适合您设计需求的元器件。

SK hynix
H5AN8G4NAFR-UHC H5AN8G4NAFR-UHC - 8Gb DDR4 SDRAM 1.2V | SK Hynix

H5AN8G4NAFR-UHC - 8Gb DDR4 SDRAM 1.2V | SK Hynix

H5AN8G4NAFR-UHC ✓ 量产中
SK hynix
H5AN8G4NAFR-PBC H5AN8G4NAFR-PBC - 8Gb DDR4 SDRAM 1.2V | SK hynix

H5AN8G4NAFR-PBC - 8Gb DDR4 SDRAM 1.2V | SK hynix

H5AN8G4NAFR-PBC ✓ 量产中

规格对比

参数 H5AN8G4NAFR-UHC H5AN8G4NAFR-PBC
品牌 SK hynix SK hynix
分类 Memory ICs DRAM
生命周期状态 有效 有效
库存状态 有库存 有库存
单价(USD) $3.05 $3.55
Manufacturer SK hynix (Hynix Semiconductor) —
存储器类型 DDR4 SDRAM (CMOS) DDR4 SDRAM
Density 8 Gbit 8 Gb
存储组织 2G x4 2Gb x 4
Supply Voltage (VDD) 1.2 V —
Speed Grade UHC —
接口 Synchronous, dual rising/falling clock edges —
Clock Input Differential CK_t / CK_c —
封装 78-ball FBGA 78-ball FBGA
安装类型 Surface Mount Surface Mount
工作温度 [DATA_NEEDED: operating temperature range] —
RoHS 状态 Compliant (Lead-Free & Halogen-Free) Compliant
Family Variants H5AN8G4NAFR-xxC / H5AN8G8NAFR-xxC / H5AN8G6NAFR-xxC —
Datasheet Revision Rev. 1.2 (Jul. 2017), 45 pages —
MSL 等级 [DATA_NEEDED: moisture sensitivity level] —
Packaging [DATA_NEEDED: reel / tray quantity] —
Interface Voltage (VDD/VDDQ) — 1.2 V +/- 0.06 V
Wordline Pump Voltage (VPP) — 2.5 V (+0.25/-0.125 V)
Speed Bins (per datasheet) — DDR4-1600 / 1866 / 2133 / 2400 (DLL ON)
Bank Groups — 4 (BG0-BG1)
Banks — 16 (4 bank groups x 4 banks)
Row Address — A0-A16 (17 bits)
Technology — CMOS
Lead-Free / Halogen-Free — Yes (RoHS Compliant per datasheet)
工作温度范围 — [DATA_NEEDED: operating temperature range]
CAS 延迟 — [DATA_NEEDED: CL for PBC speed bin]
Geardown Mode Note — DDR4-1600/1866/2133/2400 bins valid only when Geardown Mode is disabled

数据手册与资源

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