H5AN8G6NCJR-RDC vs H5ANAG8NBJR-RDC 对比
详细并排对比 H5AN8G6NCJR-RDC 出自 SK hynix 和 H5ANAG8NBJR-RDC 出自 SK hynix。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况，以确定最适合您设计需求的元器件。
规格对比
| 参数 | H5AN8G6NCJR-RDC | H5ANAG8NBJR-RDC |
|---|---|---|
| 品牌 | SK hynix | SK hynix |
| 分类 | Memory ICs | DRAM |
| 生命周期状态 | 有效 | 有效 |
| 库存状态 | 有库存 | 有库存 |
| 单价（USD） | $19.69 | $3.55 |
| Memory Density | 8 Gb (8589934592 bit) | — |
| 存储组织 | 512M x 16 | 2G x 8 |
| 存储器类型 | DDR4 SDRAM | DDR4 SDRAM |
| Technology | CMOS | — |
| Package Code | TFBGA (PBGA96) | — |
| Package Shape | Rectangular | — |
| Number of Terminals | 96 | — |
| 安装类型 | Surface Mount | Surface Mount |
| Temperature Grade | OTHER | — |
| Data Rate Family | [DATA_NEEDED: specific speed grade Mbps] | — |
| Supply Voltage Class | [DATA_NEEDED: nominal VDD per datasheet speed bin] | — |
| 工作温度范围 | [DATA_NEEDED: min/max C per -RDC bin] | — |
| Auto Self-Refresh | Yes | — |
| Auto Precharge | Yes | — |
| Asynchronous Reset | Yes | — |
| Data Mask Function | Yes | — |
| Write Leveling | Yes | — |
| CRC | Yes | — |
| Dynamic On-Chip Termination | Yes | — |
| ZQ Calibration | Yes | — |
| RoHS 状态 | Lead-Free & Halogen-Free (RoHS Compliant, per H5AN8G6 family datasheet) | Compliant (lead-free PBGA per family product data) |
| Density | — | 16 Gbit |
| Supply Voltage (VDD) | — | 1.2 V |
| I/O Voltage (VDDQ) | — | 1.2 V |
| 接口 | — | SSTL12 |
| Speed Grade (suffix R) | — | DDR4-2666 class |
| 封装 | — | 78-ball FBGA |
| Refresh | — | Self-refresh and auto-refresh (8K/64ms class per family datasheet) |
| Bank Groups | — | 4 (per 16Gb DDR4 family datasheet) |
| Data Strobe | — | DQS with read/write training |
| Data Bus Inversion | — | Supported (DBI) |
| CAS 延迟 | — | [DATA_NEEDED: CAS Latency] |
| 工作温度 | — | [DATA_NEEDED: Operating Temperature Range] |
| 生命周期状态 | — | Active |