H5AN8G6NCJR-VKC vs H5AN8G6NAFR-VKC 对比

详细并排对比 H5AN8G6NCJR-VKC 出自 SK hynix 和 H5AN8G6NAFR-VKC 出自 SK hynix。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况,以确定最适合您设计需求的元器件。

SK hynix
H5AN8G6NCJR-VKC H5AN8G6NCJR-VKC - 8Gb DDR4 SDRAM 2666Mbps | SK Hynix

H5AN8G6NCJR-VKC - 8Gb DDR4 SDRAM 2666Mbps | SK Hynix

H5AN8G6NCJR-VKC ✓ 量产中
SK hynix
H5AN8G6NAFR-VKC H5AN8G6NAFR-VKC - 8Gb DDR4 SDRAM 512Mx16 1.2V | SK Hynix

H5AN8G6NAFR-VKC - 8Gb DDR4 SDRAM 512Mx16 1.2V | SK Hynix

H5AN8G6NAFR-VKC ✓ 量产中

规格对比

参数 H5AN8G6NCJR-VKC H5AN8G6NAFR-VKC
品牌 SK hynix SK hynix
分类 Memory ICs Memory ICs
生命周期状态 有效 有效
库存状态 有库存 有库存
单价(USD) $60.00 $6.25
存储器类型 DDR4 SDRAM DDR4 SDRAM
Density 8 Gb 8 Gb
存储组织 512M x 16 512M x 16
数据速率 2666 Mbps —
Supply Voltage (VDD) 1.2 V (1.14V to 1.26V) —
工作温度 0°C to +95°C [DATA_NEEDED: operating temperature range]
封装 FBGA-96 FBGA-96 (PBGA96)
Operating Current (IDD2N) 28 mA —
Operating Current (IDD4R) 45 mA —
Burst Length 8 (BC4) —
CAS 延迟 [DATA_NEEDED: CAS Latency] [DATA_NEEDED: CAS latency for -VKC bin]
Row Address Bits [DATA_NEEDED: Row Address Bits] —
Column Address Bits [DATA_NEEDED: Column Address Bits] —
Lead-Free Yes —
无卤 Yes —
RoHS Compliant —
Core Supply Voltage — 1.2 V
Technology — CMOS
Speed Grade — -VKC (DDR4-2666 class, per SK Hynix part numbering)
Data Rate Class — Up to 2666 MT/s (per -VKC speed code)
Family — H5AN8G4NAFR / H5AN8G8NAFR / H5AN8G6NAFR
安装类型 — Surface Mount (BGA)
RoHS 状态 — Lead-Free & Halogen-Free, RoHS Compliant
Application — Main memory (high density, high bandwidth)
Refresh — [DATA_NEEDED: refresh mode specification]
Package Dimensions — [DATA_NEEDED: package dimensions]
MSL 等级 — [DATA_NEEDED: moisture sensitivity level]

数据手册与资源

浏览全部产品 创建 BOM 获取报价