H5AN8G8NAFR-RDC vs H5AN8G6NAFR-RDC 对比

详细并排对比 H5AN8G8NAFR-RDC 出自 SK hynix 和 H5AN8G6NAFR-RDC 出自 SK hynix。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况,以确定最适合您设计需求的元器件。

SK hynix
H5AN8G8NAFR-RDC H5AN8G8NAFR-RDC - 8Gb DDR4 SDRAM x8 | SK hynix

H5AN8G8NAFR-RDC - 8Gb DDR4 SDRAM x8 | SK hynix

H5AN8G8NAFR-RDC ✓ 量产中
SK hynix
H5AN8G6NAFR-RDC H5AN8G6NAFR-RDC - 8Gb DDR4 SDRAM 512Mx16 | SK Hynix

H5AN8G6NAFR-RDC - 8Gb DDR4 SDRAM 512Mx16 | SK Hynix

H5AN8G6NAFR-RDC ✓ 量产中

规格对比

参数 H5AN8G8NAFR-RDC H5AN8G6NAFR-RDC
品牌 SK hynix SK hynix
分类 Memory ICs Memory ICs
生命周期状态 有效 有效
库存状态 有库存 有库存
单价(USD) $2.95 $3.05
存储器类型 DDR4 SDRAM DDR4 SDRAM
Density 8 Gbit —
存储组织 1G x 8 (x8) 512M x 16
接口 DDR4 (Double Data Rate 4) DDR4 (JEDEC-standard)
Speed Grade -RDC (DDR4-2666 class) -RDC (see datasheet for bin timing)
数据速率 2666 MT/s (per -R speed grade suffix) —
Core Supply Voltage (VDD) 1.2 V —
I/O Supply Voltage (VDDQ) 1.2 V —
Wordline Supply (VPP) 2.5 V —
Banks / Bank Groups 16 banks / 4 bank groups (DDR4 8Gb architecture) —
Burst Length 8 (BL8) —
CAS 延迟 [DATA_NEEDED: CAS Latency] —
封装 78-ball FBGA —
安装类型 Surface Mount Surface Mount
工作温度 [DATA_NEEDED: Operating Temperature range] [DATA_NEEDED: operating temperature range]
Lead-Free Yes —
无卤 Yes —
RoHS 状态 Compliant Compliant (Lead-Free & Halogen-Free)
Datasheet Revision Rev. 1.2 / Jul. 2017 —
Memory Density — 8 Gb
电源电压 — 1.2 V
Access Mode — Multi Bank Page Burst
Package Code — TFBGA
Package Shape — Rectangular
Number of Terminals — 96
Temperature Grade — OTHER (per Partstack listing)
Technology — CMOS
Family — H5AN8G4NAFR-xxC / H5AN8G8NAFR-xxC / H5AN8G6NAFR-xxC
Max Clock Rate — [DATA_NEEDED: max clock rate for -RDC bin]

数据手册与资源

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