H5AN8G8NAFR-RDC - 8Gb DDR4 SDRAM x8 | SK hynix
料号： H5AN8G8NAFR-RDC ✓ 量产中| 数量 | 单价 | 小计 |
|---|---|---|
| 1 | $4.2 | $4.20 |
| 10 | $3.95 | $39.50 |
| 100 | $3.55 | $355.00 |
| 500 | $3.2 | $1,600.00 |
| 1,000 | $2.95 | $2,950.00 |
H5AN8G8NAFR-RDC 概述
DDR4 SDRAM is the fourth generation of double-data-rate synchronous dynamic random-access memory, the dominant class of main-memory ICs in servers, workstations, and embedded computing systems. Within the memory hierarchy, a DDR4 SDRAM chip sits at the level of main system memory: it is a volatile DRAM IC that stores data in capacitor-based cells, refreshed continuously, and communicates with a memory controller over a source-synchronous, double-data-rate interface clocked by differential CK/CK# signals.
Key features of the H5AN8G8NAFR family include 8 Gbit density per die, a x8 I/O organization (1,073,741,824 x 8), operation at 1.2V nominal core supply (VDD/VDDQ) with a separate 2.5V VPP supply for wordline bootstrapping, and burst lengths of 8 (BL8) with on-die termination (ODT) and data mask (DM) support on the x8 configuration. The -RDC speed grade supports DDR4-2666 data-rate operation with JEDEC-standard timing.
Technically, DDR4 introduced bank-group architecture (four bank groups in the 8Gb monolithic die, eight banks total) allowing interleaved accesses to increase effective bandwidth, plus a reduced 1.2V signaling environment compared with DDR3's 1.5V, lowering dynamic power roughly proportional to V squared. The device uses differential data strobes (DQS/DQS#), a programmable CAS latency, and JEDEC mode-register configuration via MRS commands; a dedicated RESET# ball simplifies power-rail sequencing during system bring-up.
Typical applications include PC client and server DIMM modules (UDIMM, RDIMM, SODIMM), embedded and industrial motherboards, networking equipment line cards, and set-top or smart-TV platforms that require dense main memory. In module designs, nine x8 devices build an ECC-equipped 8GB rank.
Design consideration: respect the JEDEC DDR4 power-up sequence - apply VPP before or with VDD, hold RESET# low until all supplies stabilize, and provide accurate on-die termination settings; AC timing and routing must follow fly-by termination practice for multi-rank loads.
This page synthesizes datasheet facts, drop-in alternatives, pricing, and design notes not found in the raw manufacturer datasheet, providing engineers with a single citable reference.
直接替换替代料： H5AN8G8NAFR-RDC ——相同封装，引脚兼容。需要 PCB 改动的不同封装料号已排除。
本系列中的变体
可与以下型号直接替换的同系列型号： H5AN8G8NAFR-RDC （相同外形与封装尺寸） ——差异在于 Interface, Package, Organization, Data Rate, RoHS Status.
快速对比工具——选择替代料号进行并排对比：
H5AN8G8NAFR-PBC
✅ 直接替换✓ 有现货
$2.2 / 个
查看数据手册 →H5AN8G8NAFR-TFC
✅ 直接替换📋 参考替代料（不在目录中）
H5AN8G8NAFR-UHC
✅ 直接替换✓ 有现货
联系询价
查看数据手册 →H5AN8G8NMFR-TFC
✅ 直接替换📋 参考替代料（不在目录中）
MT40A1G8AG-062E
✅ 直接替换✓ 有现货
$3.1 / 个
查看数据手册 →K4A8G085WC-BCRC
✅ 直接替换✓ 有现货
$4.3 / 个
查看数据手册 →H5AN8G8NAFR-RDC 最大额定值与电气特性
| 存储器类型 | DDR4 SDRAM |
| Density | 8 Gbit |
| 存储组织 | 1G x 8 (x8) |
| 接口 | DDR4 (Double Data Rate 4) |
| Speed Grade | -RDC (DDR4-2666 class) |
| 数据速率 | 2666 MT/s (per -R speed grade suffix) |
| Core Supply Voltage (VDD) | 1.2 V |
| I/O Supply Voltage (VDDQ) | 1.2 V |
| Wordline Supply (VPP) | 2.5 V |
| Banks / Bank Groups | 16 banks / 4 bank groups (DDR4 8Gb architecture) |
| Burst Length | 8 (BL8) |
| 封装 | 78-ball FBGA |
| 安装类型 | Surface Mount |
| Lead-Free | Yes |
| 无卤 | Yes |
| RoHS 状态 | Compliant |
| Datasheet Revision | Rev. 1.2 / Jul. 2017 |
H5AN8G8NAFR-RDC 78-ball fbga 引脚配置指南
H5AN8G8NAFR-RDC（78-ball fbga 封装）的引脚配置。 该数字 IC 包含 GPIO、通信接口（UART、SPI、I2C）和电源引脚。请参阅制造商数据手册以了解复用引脚功能和配置选项。对嵌入式系统设计和 PCB 布局至关重要。
暂无详细引脚数据： H5AN8G8NAFR-RDC.
请参阅 数据手册 以查看完整引脚配置。
典型应用
H5AN8G8NAFR-RDC 适用于 6 应用s: PC Client and SODIMM Main Memory, Server RDIMM and ECC Memory, Networking and Telecom Line Cards, Embedded and Industrial Motherboards, Set-Top Box and Smart TV Platforms, Test, Measurement, and Data Acquisition Systems.
PC Client and SODIMM Main Memory
The H5AN8G8NAFR-RDC provides 8Gb of main memory per device for notebook, mini-PC, and SODIMM assemblies. With x8 organization, eight devices build a 64-bit non-ECC 8GB rank; nine devices add SECDED ECC. Its DDR4-2666-class -RDC speed grade matches mainstream client controller training profiles, while the 1.2V VDD/VDDQ interface cuts I/O power relative to DDR3 by roughly 20% at comparable bandwidth. Designers place the devices on fly-by-routed command/address nets with on-die termination (ODT) absorbing reflections, and use the 2.5V VPP rail for wordline pumping. The trade-off versus lower-density parts is higher per-device idle current, so S3/S0ix power gating and CKE management become mandatory in battery-operated platforms.
推荐
Server RDIMM and ECC Memory
In registered server modules, the x8 organization of the H5AN8G8NAFR-RDC enables single-device data correction (SDDC): nine x8 chips form a 72-bit ECC rank that survives an entire device failure. The DDR4 bank-group architecture delivers interleaved 2666 MT/s bandwidth per rank that registered clock drivers can sustain across dual-rank modules. Engineers mount the 78-ball FBGA devices with fly-by CA routing and per-pin length matching for DQ/DQS groups, then encode speed bin, ranks, and manufacturer data into SPD EEPROM for the BIOS memory-training engine. Because DDR4 training is vendor-sensitive, qualifying a second source such as MT40A1G8AG-062E on the same footprint protects server production against DRAM allocation swings.
推荐
Networking and Telecom Line Cards
Switch, router, and 5G baseband line cards use the H5AN8G8NAFR-RDC as packet-buffer and lookup-table memory, where 8Gb density supports deep burst buffers at high throughput. The device's BL8 burst and four-bank-group structure sustain sustained sequential bandwidth suitable for QoS queuing engines reading and writing concurrently. Boards typically run the DRAM at 1.2V with careful stackup design (low-loss dielectric, reference planes) to meet DDR4-2666 eye masks at line-card temperatures. Because telecom equipment demands long service life, the RoHS-compliant, Lead-Free and Halogen-Free construction simplifies environmental compliance, and designers should verify the -RDC commercial temperature classification against their board-level ambient specification before release.
推荐
Embedded and Industrial Motherboards
Industrial PCs, medical instruments, and factory HMI controllers integrate the H5AN8G8NAFR-RDC to obtain 8GB+ of main memory in compact footprints without SO-DIMM sockets. The 78-ball FBGA survives vibration profiles that defeat edge connectors, and the 1.2V signaling reduces EMI relative to DDR3 designs. Memory controllers in embedded SoCs (ARM/Intel embedded lines) provide DDR4 training with vendor-specific MR values, so qualification should include the SK hynix H5AN8G8NAFR dataset plus a cross-brand drop-in. Designers must implement the JEDEC power-up sequence with VPP-before-VDD ordering and RESET# held low through rail ramp, then budget refresh current in thermally enclosed enclosures where 85C-class ambient limits apply.
推荐
Set-Top Box and Smart TV Platforms
Digital set-top boxes and 4K smart-TV SoCs use the H5AN8G8NAFR-RDC for multi-stream video buffering, graphics frame buffers, and conditional-access workloads that exceed what stacked-package memory can supply. A single 8Gb x8 device gives 1GB on one footprint; two devices cover mainstream 2GB BOMs. The DDR4-2666-class interface provides the bandwidth headroom for simultaneous 4K decode and UI composition, while CKE clock gating minimizes idle power for energy-star compliance. Consumer platforms value the RoHS-compliant Lead-Free/Halogen-Free construction for global certification. Layout teams should keep DQS/DQ length matching within DDR4-2666 skew budgets and place 0.1uF plus 10uF decoupling per device on the 1.2V VDDQ plane to control simultaneous-switching noise.
推荐
Test, Measurement, and Data Acquisition Systems
High-speed oscilloscopes, logic analyzers, and data-acquisition instruments use the H5AN8G8NAFR-RDC as deep capture memory, streaming ADC samples into 8Gb-deep buffers. The device's high sequential write bandwidth at 2666 MT/s class matches multi-GSPS sample streams after demultiplexing, and BL8 bursts align naturally with burst-buffer write scheduling. Instruments demand deterministic latency, so designers disable controller prefetch speculation or account for refresh (tRFC) stalls in trigger-alignment firmware. The 78-ball FBGA withstands the thermal cycling of rack environments, and the 1.2V interface simplifies power-tree design alongside modern FPGA platforms. Qualify both SK hynix and cross-brand drop-ins (MT40A1G8AG-062E) to de-risk long instrument production lifecycles against DRAM EOL events.
推荐
推荐产品汇总
工程参考数据： H5AN8G8NAFR-RDC ——对比、设计指导和合规信息。
选型指南
与替代料对比
| 参数 | 本产品 | H5AN8G8NAFR-PBC | H5AN8G8NAFR-UHC | MT40A1G8AG-062E | K4A8G085WC-BCRC |
|---|---|---|---|---|---|
| Brand | SK Hynix | SK Hynix | SK Hynix | Micron Technology | Samsung Electronics |
| Package | 78-ball FBGA | 78-ball FBGA - same | 78-ball FBGA - same | 78-ball FBGA - same | 78-ball FBGA - same |
| Density | 8 Gbit | 8 Gbit | 8 Gbit | 8 Gbit | 8 Gbit |
| Organization | x8 | x8 | x8 | x8 | x8 |
| Interface / Class | DDR4 | DDR4 | DDR4 | DDR4 | DDR4 |
| Core Supply Voltage | 1.2 V | 1.2 V | 1.2 V | 1.2 V | 1.2 V |
关键差异点
- Highest-speed suffix in the N-die NAFR x8 family （对比 H5AN8G8NAFR-UHC)
- JEDEC cross-brand pin compatibility （对比 MT40A1G8AG-062E)
- Lead-Free, Halogen-Free, RoHS-compliant construction （对比 H5AN8G8NMFR-TFC)
设计说明
The H5AN8G8NAFR-RDC requires three rails: VPP 2.5V, VDD 1.2V, and VDDQ 1.2V. Follow the JEDEC DDR4 power-up order: VPP before or with VDD/VDDQ, and hold RESET# low through rail ramp until all supplies are stable. Estimated: at DDR4-2666-class operation a single 8Gb device can draw roughly 300-500 mA peak on VDDQ during bank-group interleaved bursts (verify with the datasheet IDD tables on page 31), so budget the 1.2V VRM with margin and decouple with bulk 100uF plus per-device 0.1uF/10uF ceramics.
Route DQ/DQS/DM as length-matched groups with on-die termination enabled; keep DQS-to-DQ skew within the DDR4-2666-class setup/hold budget. For multi-device loads (DIMM-style), use fly-by routing on clock, command, and address with ODT compensating for the transmission-line taper. Place the ZQ calibration resistor (240 ohm, 1%) within 5 mm of the ZQ ball with a solid ground return. Reference all high-speed nets to an unbroken ground plane and avoid splitting the reference under DQ groups.
Do not issue MRS commands before supply stabilization or release RESET# early - these are the two most frequent DDR4 bring-up failures. Do not mix speed grades on a shared bus without configuring the controller for the slower bin. Note the -RDC 'D' temperature classification: confirm it matches your board's worst-case ambient before selecting this suffix for enclosed or industrial products. Finally, DDR4 training is vendor-sensitive; if you substitute a Micron or Samsung drop-in, re-run memory training and validate the full MR programming set.
合规信息
Lead-Free & Halogen-Free (RoHS Compliant) per SK hynix H5AN8G8NAFR-RDC datasheet description. REACH and conflict-minerals status not stated in provided data. AEC-Q100 qualification not stated - assume commercial grade only.