H5AN8G8NAFR-UHC vs H5AN8G8NAFR-VKC 对比

详细并排对比 H5AN8G8NAFR-UHC 出自 SK hynix 和 H5AN8G8NAFR-VKC 出自 SK hynix。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况,以确定最适合您设计需求的元器件。

SK hynix
H5AN8G8NAFR-UHC H5AN8G8NAFR-UHC - 8Gb DDR4 SDRAM 2400Mbps | SK Hynix

H5AN8G8NAFR-UHC - 8Gb DDR4 SDRAM 2400Mbps | SK Hynix

H5AN8G8NAFR-UHC ✓ 量产中
SK hynix
H5AN8G8NAFR-VKC H5AN8G8NAFR-VKC - 8Gb DDR4-2666 SDRAM 1.2V | SK hynix

H5AN8G8NAFR-VKC - 8Gb DDR4-2666 SDRAM 1.2V | SK hynix

H5AN8G8NAFR-VKC ✓ 量产中

规格对比

参数 H5AN8G8NAFR-UHC H5AN8G8NAFR-VKC
品牌 SK hynix SK hynix
分类 Memory ICs Memory ICs
生命周期状态 有效 有效
库存状态 有库存 有库存
单价(USD) $0.00 $4.15
存储器类型 DDR4 SDRAM DDR4 SDRAM
Density 8 Gbit 8 Gb
存储组织 1G x 8 1G x 8
数据速率 2400 Mbps/pin (PC2400) —
Supply Voltage (VDD) 1.2 V (DDR4 standard) 1.2 V
接口 CMOS, synchronous SSTL12
封装 FBGA-78 (PBGA78) 78-ball FBGA
安装类型 Surface Mount Surface Mount
Family H5AN8G4NAFR-xxC / H5AN8G8NAFR-xxC / H5AN8G6NAFR-xxC —
Speed Grade Suffix UHC —
RoHS 状态 Compliant (Lead-Free & Halogen-Free) Compliant (Lead-Free & Halogen-Free)
Application Class Main memory (high density, high bandwidth) —
工作温度 [DATA_NEEDED: Operating Temperature] [DATA_NEEDED: operating temperature range]
CAS Latency (CL) [DATA_NEEDED: CAS Latency] —
Refresh [DATA_NEEDED: Refresh specification] —
MSL 等级 [DATA_NEEDED: MSL Level] —
Speed Grade — DDR4-2666 (VKC bin)
Burst Length — 8 (BL8)
Bank Group Architecture — Supported (per DDR4 JEDEC architecture)
On-Die Termination (ODT) — Yes
DLL — Yes (DLL for output skew control)
Process Technology — CMOS
Recommended Application — Main memory requiring large density and high bandwidth

数据手册与资源

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