H5AN8G8NAFR-UHC vs MT40A1G8AG-062E 对比

详细并排对比 H5AN8G8NAFR-UHC 出自 SK hynix 和 MT40A1G8AG-062E 出自 Micron Technology。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况,以确定最适合您设计需求的元器件。

SK hynix
H5AN8G8NAFR-UHC H5AN8G8NAFR-UHC - 8Gb DDR4 SDRAM 2400Mbps | SK Hynix

H5AN8G8NAFR-UHC - 8Gb DDR4 SDRAM 2400Mbps | SK Hynix

H5AN8G8NAFR-UHC ✓ 量产中
Micron Technology
MT40A1G8AG-062E MT40A1G8AG-062E - 8Gb DDR4 SDRAM 3200Mb/s x8 | Micron

MT40A1G8AG-062E - 8Gb DDR4 SDRAM 3200Mb/s x8 | Micron

MT40A1G8AG-062E ✓ 量产中

规格对比

参数 H5AN8G8NAFR-UHC MT40A1G8AG-062E
品牌 SK hynix Micron Technology
分类 Memory ICs Memory ICs
生命周期状态 有效 有效
库存状态 有库存 有库存
单价(USD) $0.00 $3.10
存储器类型 DDR4 SDRAM DDR4 SDRAM
Density 8 Gbit —
存储组织 1G x 8 1G x 8
数据速率 2400 Mbps/pin (PC2400) —
Supply Voltage (VDD) 1.2 V (DDR4 standard) 1.2 V
接口 CMOS, synchronous Parallel
封装 FBGA-78 (PBGA78) 78-FBGA (7.5 x 11 mm)
安装类型 Surface Mount Surface Mount (BGA)
Family H5AN8G4NAFR-xxC / H5AN8G8NAFR-xxC / H5AN8G6NAFR-xxC —
Speed Grade Suffix UHC —
RoHS 状态 Compliant (Lead-Free & Halogen-Free) [DATA_NEEDED: RoHS status]
Application Class Main memory (high density, high bandwidth) —
工作温度 [DATA_NEEDED: Operating Temperature] —
CAS Latency (CL) [DATA_NEEDED: CAS Latency] —
Refresh [DATA_NEEDED: Refresh specification] —
MSL 等级 [DATA_NEEDED: MSL Level] —
存储容量 — 8 Gbit
Clock Frequency — 1.6 GHz (DDR4-3200, 3200 MT/s data rate)
Clock Cycle Time — 19 ns class (-062E speed grade)
Temperature Grade — Automotive (AUT)
Access Time (CAS Latency class) — DDR4-3200 timing class (tAA per datasheet)
Bank Group Architecture — Yes (DDR4 bank groups)
Termination — On-Die Termination (ODT)
CA Parity — Supported (DDR4 command/address parity)
Packaging Option — Tape and Reel (TR / :R suffix)
工作温度范围 — [DATA_NEEDED: operating temperature range]
Refresh Rate — [DATA_NEEDED: refresh rate]

数据手册与资源

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