MT40A1G8AG-062E - 8Gb DDR4 SDRAM 3200Mb/s x8 | Micron
料号： MT40A1G8AG-062E ✓ 量产中| 数量 | 单价 | 小计 |
|---|---|---|
| 1 | $4.2 | $4.20 |
| 10 | $3.95 | $39.50 |
| 100 | $3.6 | $360.00 |
| 500 | $3.35 | $1,675.00 |
| 1,000 | $3.1 | $3,100.00 |
MT40A1G8AG-062E 概述
DDR4 SDRAM (Double Data Rate 4 Synchronous Dynamic Random Access Memory) is the fourth generation of the DDR DRAM family, succeeding DDR3. In the memory hierarchy it sits within the broader categories of DRAM, semiconductor memory, and memory ICs. DDR4 introduced a lower core voltage (1.2V vs 1.35/1.5V for DDR3), bank groups, and higher data rates up to 3200 MT/s, making it the dominant main-memory technology for servers, workstations, and embedded processors of its generation.
Key features of this part include the 8Gbit density in a space-saving x8 organization, DDR4-3200 speed grade (-062E timing suffix corresponding to a 19 ns clock cycle), 1.2V low-voltage operation that reduces memory subsystem power versus DDR3, and automotive-grade screening for extended operating environments. The 78-ball FBGA (7.5 x 11 mm) fine-pitch ball grid array is the industry-standard footprint for x8 DDR4 components, which supports second-source layouts.
Architecturally, the device uses the DDR4 bank-group structure (four groups of four banks), 8n prefetch, and on-die termination (ODT) to sustain high bus efficiency. Command/address parity (CA parity) and alert output features improve system reliability in mission-critical platforms, attributes that matter in automotive and industrial designs where the AUT grade targets.
Typical applications include automotive infotainment and ADAS main memory alongside processors and SoCs, industrial automation controllers and gateways, and networking/telecom line-card memory buffers. The x8 organization suits designs using discrete DRAM chips soldered directly on the CPU board or on memory risers.
Design consideration: DDR4 signal integrity requires length-matched, fly-by routed command/address trees, per-byte ODT tuning via Mode Registers, and VTT termination supplied by a dedicated termination regulator; verify the SoC memory controller supports DDR4-3200 timing (tCK = 0.625 ns nominal).
This page synthesizes distributor pricing, drop-in alternatives, and practical design notes not found in the manufacturer datasheet.
直接替换替代料： MT40A1G8AG-062E ——相同封装，引脚兼容。需要 PCB 改动的不同封装料号已排除。
本系列中的变体
可与以下型号直接替换的同系列型号： MT40A1G8AG-062E （相同外形与封装尺寸） ——差异在于 Interface, Organization, Package, RoHS Status, Density.
快速对比工具——选择替代料号进行并排对比：
MT40A1G8SA-062E:J
✅ 直接替换📋 参考替代料（不在目录中）
MT40A1G8AG-062E:A
✅ 直接替换 ⚠️ 规格未核验📋 参考替代料（不在目录中）
MT40A2G8AG-062E
✅ 直接替换✓ 有现货
$9.75 / 个
查看数据手册 →MT40A1G8AG-062ER
✅ 直接替换📋 参考替代料（不在目录中）
K4A8G085WC-BCWE
✅ 直接替换✓ 有现货
$7.3828 / 个
查看数据手册 →MT40A1G8AG-062E 最大额定值与电气特性
| 存储器类型 | DDR4 SDRAM |
| 存储容量 | 8 Gbit |
| 存储组织 | 1G x 8 |
| 接口 | Parallel |
| Clock Frequency | 1.6 GHz (DDR4-3200, 3200 MT/s data rate) |
| Clock Cycle Time | 19 ns class (-062E speed grade) |
| Supply Voltage (VDD) | 1.2 V |
| 封装 | 78-FBGA (7.5 x 11 mm) |
| 安装类型 | Surface Mount (BGA) |
| Temperature Grade | Automotive (AUT) |
| Access Time (CAS Latency class) | DDR4-3200 timing class (tAA per datasheet) |
| Bank Group Architecture | Yes (DDR4 bank groups) |
| Termination | On-Die Termination (ODT) |
| CA Parity | Supported (DDR4 command/address parity) |
| Packaging Option | Tape and Reel (TR / :R suffix) |
MT40A1G8AG-062E 78-fbga (7.5 x 11 mm) 引脚配置指南
MT40A1G8AG-062E（78-fbga (7.5 x 11 mm) 封装）的引脚配置。 该数字 IC 包含 GPIO、通信接口（UART、SPI、I2C）和电源引脚。请参阅制造商数据手册以了解复用引脚功能和配置选项。对嵌入式系统设计和 PCB 布局至关重要。
暂无详细引脚数据： MT40A1G8AG-062E.
请参阅 数据手册 以查看完整引脚配置。
典型应用
MT40A1G8AG-062E 适用于 6 应用s: Automotive Infotainment and ADAS Main Memory, Industrial Automation Controllers and Gateways, Networking and Telecom Line Cards, Embedded Compute Modules and SoMs, Test and Measurement Instrumentation, Smart Vision and Surveillance Systems.
Automotive Infotainment and ADAS Main Memory
The AUT temperature grade and 8Gbit density make the MT40A1G8AG-062E well suited as discrete main memory for automotive SoCs driving infotainment head units, digital clusters, and ADAS sensor-fusion platforms. Its DDR4-3200 data rate (3200 MT/s at 1.2V) supplies the bandwidth headroom that camera streams, navigation rendering, and voice processing demand, while the x8 organization lets designers populate multiple chips to match a 32-bit or 64-bit controller bus. On-die termination and CA parity improve signal integrity and reliability in the electrically noisy automotive environment. Place the device close to the SoC with fly-by routed command/address lines and length-matched DQ strobes; the standard 78-ball FBGA footprint also supports second-sourcing with Alliance Memory equivalents.
推荐
Industrial Automation Controllers and Gateways
Industrial PLCs, edge gateways, and machine-vision controllers require dense, reliable working memory, and the MT40A1G8AG-062E fits this role with 8Gbit capacity and a 19 ns class DDR4-3200 interface. The 1.2V core voltage reduces DRAM subsystem power compared with DDR3 parts, easing thermal design in sealed industrial enclosures with no forced airflow. The 78-ball FBGA (7.5 x 11 mm) survives vibration better than edge-connector DIMMs, which matters on moving machinery. Designers typically pair the SDRAM with industrial flash for code storage and should follow the SoC memory controller's DDR4 layout guide: fly-by C/A routing, per-byte ODT tuning, and VTT termination regulation to sustain DDR4-3200 timing across the extended industrial temperature envelope.
推荐
Networking and Telecom Line Cards
Packet buffers, queue descriptors, and flow tables in switching and routing equipment need high-bandwidth DRAM with predictable latency, which the MT40A1G8AG-062E delivers through its DDR4-3200 interface and bank-group architecture. Multiple x8 chips can be arranged on a 64-bit bus to aggregate more than 25 GB/s of peak bandwidth at 1.2V, while CA parity and alert functions help detect transmission errors on the command bus - a reliability feature network operators value. The 78-ball FBGA footprint permits dense placement around merchant-silicon switch ASICs or network processors. For best results, follow the ASIC vendor's signal-integrity guidance, verify read/write leveling at full data rate, and reserve thermal margin since DRAM refresh power rises with temperature.
推荐
Embedded Compute Modules and SoMs
System-on-module vendors solder the MT40A1G8AG-062E directly beneath or beside application processors to provide 1 GB of main memory per chip in a compact module footprint. The industry-standard 78-ball FBGA (7.5 x 11 mm) matches processor evaluation-board reference designs, and the DDR4-3200 speed grade supports the full bandwidth of mainstream embedded SoCs. Because the AUT-grade part carries extended screening, module makers can create a single PCB assembly qualified across industrial and automotive variants. Layout work centers on length-matched DQ groups, controlled-impedance stackups, and ODT mode-register tuning; the drop-in Alliance Memory MT40A1G8AG-062ER offers a commercial-temperature second source for cost-optimized module SKUs.
推荐
Test and Measurement Instrumentation
Oscilloscopes, logic analyzers, and signal generators use deep capture memory to store acquired waveforms, and the MT40A1G8AG-062E contributes 8Gbit per chip at a 3200 MT/s data rate to those capture buffers. The x8 organization and parallel DDR4 interface let instrument designers build 64-bit-wide, multi-GB capture arrays from eight or more chips, while the deterministic DDR4 timing (19 ns class) supports predictable streaming into acquisition ASICs or FPGAs. On-die termination simplifies the point-to-point topology typical inside instruments. Designers should quantify refresh and background-read overhead when budgeting sustained capture bandwidth, and validate the memory controller's write-leveling at DDR4-3200 across process, voltage, and temperature corners during system bring-up.
推荐
Smart Vision and Surveillance Systems
Multi-camera NVRs and smart surveillance appliances buffer continuous video streams in DRAM before spooling to storage, and the MT40A1G8AG-062E provides 8Gbit of working buffer per chip at DDR4-3200 speeds. At 1.2V the memory subsystem draws less power than DDR3 equivalents, which reduces heat inside fanless surveillance enclosures, and the automotive-grade screening benefits always-on equipment subject to wide ambient swings. Multiple x8 devices populate a 64-bit bus around the video SoC, sustaining the aggregate bandwidth required by H.265 encode/decode pipelines. Follow fly-by command/address routing with proper VTT termination, and size the buffering pool so peak multi-stream bursts never starve the storage write path.
推荐
推荐产品汇总
工程参考数据： MT40A1G8AG-062E ——对比、设计指导和合规信息。
选型指南
与替代料对比
| 参数 | 本产品 | MT40A1G8SA-062E:J | MT40A2G8AG-062E | MT40A1G8AG-062ER | K4A8G085WC-BCWE |
|---|---|---|---|---|---|
| Package | 78-FBGA (7.5 x 11 mm) | 78-FBGA (7.5 x 11 mm) - same | 78-FBGA (7.5 x 11 mm) - same | 78-ball FBGA - same | 78-FBGA - same |
| Brand | Micron Technology | Micron Technology | Micron Technology | Alliance Memory | Samsung Electronics |
| Memory Size | 8 Gbit | 8 Gbit | 16 Gbit | 8 Gbit | 8 Gbit |
| Organization | 1G x 8 | 1G x 8 | 2G x 8 | 1G x 8 | 1G x 8 |
| Data Rate | 3200 MT/s (DDR4-3200) | 3200 MT/s (-062E) | 3200 MT/s (-062E) | 1600 MHz clock (DDR4-3200 class) | 3200 MT/s (085 speed grade) |
| Supply Voltage | 1.2 V | 1.2 V | 1.2 V | 1.2 V | 1.2 V |
| Temperature Grade | Automotive (AUT) | Standard/commercial (J suffix) | Automotive (AG suffix family) | Commercial temp | Commercial (WE suffix) |
关键差异点
- Automotive (AUT) temperature screening （对比 MT40A1G8AG-062ER)
- Higher bandwidth at same power envelope （对比 MT40A512M8RH-083E)
- Density upgrade path within identical footprint （对比 MT40A2G8AG-062E)
设计说明
DDR4-3200 (3200 MT/s) leaves little timing margin, so route all DQ/DQS/DM traces in length-matched byte lanes with controlled impedance (typically 40 ohm single-ended, 80 ohm differential) and use fly-by topology for command/address with per-drop stub compensation. Enable write leveling and read training in the memory controller during bring-up, and tune ODT mode registers (MR1/MR6) against your specific stackup to minimize eye closure at the full data rate.
The 1.2V VDD rail serves both core and (via VDDQ) I/O power; provide a low-impedance PDN with bulk capacitance near each DRAM plus 0.1 uF ceramics per ball group. A dedicated VTT termination regulator supplying VDDQ/2 must source and sink the transient termination current of the fly-by bus - size it for the number of loaded traces, not just chip count. Estimated: an 8-chip 64-bit DDR4-3200 subsystem commonly draws 2-4 W peak, so budget the DC-DC rails accordingly and verify with your own current measurements.
Do not swap die revisions (AG vs SA suffix) without reading the Alliance/Micron comparison document and confirming mode register defaults and AC timing tables match your controller training algorithms. Also note the AUT automotive suffix differs from commercial grades: the commercial Alliance MT40A1G8AG-062ER is footprint- and organization-compatible but is not automotive-screened, so it cannot silently replace this part in safety-related automotive programs without requalification.
合规信息
Automotive (AUT) temperature grade indicated by part-number suffix per Micron/DigiKey listings; formal RoHS/REACH/AEC-Q100 qualification status should be confirmed on the Micron product page or via certificate request.
