H5ANAG6NAMR-UHC vs H5ANAG6NBJR-UHC 对比
详细并排对比 H5ANAG6NAMR-UHC 出自 SK hynix 和 H5ANAG6NBJR-UHC 出自 SK hynix。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况，以确定最适合您设计需求的元器件。
规格对比
| 参数 | H5ANAG6NAMR-UHC | H5ANAG6NBJR-UHC |
|---|---|---|
| 品牌 | SK hynix | SK hynix |
| 分类 | Memory ICs | DRAM |
| 生命周期状态 | 有效 | 有效 |
| 库存状态 | 有库存 | 有库存 |
| 单价（USD） | $4.50 | $8.09 |
| 存储器类型 | DDR4 SDRAM | DDR4 SDRAM |
| Memory Density | 16 Gbit (2 GB) | — |
| 存储组织 | 1G x 16 | 256M x 16 |
| Speed Grade / Data Rate | DDR4-2400 (UHC bin, PC4-19200) | — |
| Supply Voltage (VDD) | 1.2 V | — |
| Architecture | CMOS DDR4 with bank groups | — |
| Power Class | Normal Power | — |
| 封装 | FBGA-96 (PBGA96) | PBGA96 / FBGA-96 (TFBGA) |
| 安装类型 | Surface Mount (BGA solder ball) | — |
| 工作温度 | [DATA_NEEDED: operating temperature range] | -40C to +95C |
| Refresh | Self-refresh and auto-refresh (DDR4 standard 64 ms) | Auto / Self Refresh |
| CAS 延迟 | [DATA_NEEDED: CL for UHC bin] | [DATA_NEEDED: CAS Latency] |
| 接口类型 | Parallel, synchronous, double data rate | — |
| Available Speed Bins (family) | PB / RD / TF / UH / VK | — |
| Application Class | Main memory, embedded, industrial | — |
| RoHS 状态 | [DATA_NEEDED: RoHS status] | RoHS Compliant |
| 生命周期状态 | Active production | — |
| Density | — | 4 Gb |
| 接口 | — | DDR4 (CMOS) |
| Package Dimensions | — | 13 mm length (per JESD-30 R-PBGA-B96) |
| Access Mode | — | Multi Bank, Page Burst |
| Data Mask | — | Supported (DM function) |
| Asynchronous Reset | — | Supported |
| On-Chip Termination | — | Dynamic ODT |
| ZQ Calibration | — | Supported |
| Write Leveling | — | Supported |
| CRC | — | Supported |
| Supply Voltage Class | — | DDR4 (1.2 V class) |
| REACH Compliance | — | Compliant |
| ECCN | — | EAR99 |
| HTS Code | — | 8542.32.00.36 |
| Max Data Rate | — | [DATA_NEEDED: Max Data Rate] |