H5ANAG6NBJR-VKC vs H5ANAG4NBJR-RDC 对比
详细并排对比 H5ANAG6NBJR-VKC 出自 SK hynix 和 H5ANAG4NBJR-RDC 出自 SK hynix。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况，以确定最适合您设计需求的元器件。
规格对比
| 参数 | H5ANAG6NBJR-VKC | H5ANAG4NBJR-RDC |
|---|---|---|
| 品牌 | SK hynix | SK hynix |
| 分类 | Memory ICs | Memory ICs |
| 生命周期状态 | 有效 | 有效 |
| 库存状态 | 有库存 | 有库存 |
| 单价（USD） | $15.00 | $5.75 |
| Manufacturer | SK Hynix | — |
| Part Number | H5ANAG6NBJR-VKC | — |
| 存储器类型 | DDR4 SDRAM | DDR4 SDRAM |
| Memory Density | 16Gb (2GB) | — |
| 存储组织 | [DATA_NEEDED: x16 organization per datasheet] | 4G x 4 |
| 数据速率 | 2666 Mbps (per family reference, VKC speed code) | 2666 MT/s (speed bin NBJR, [DATA_NEEDED: exact MT/s confirmation from datasheet]) |
| 电源电压 | 1.2 V (DDR4 standard) | — |
| 接口 | DDR4, SSTL-12 | SSTL-12 |
| 封装 | FBGA-96 (PBGA96) | 78-ball FBGA |
| 安装类型 | Surface Mount | Surface Mount |
| 工作温度 | -40C to +95C (family grade reference) | — |
| Auto Self-Refresh | Yes | — |
| Data Mask Function | Yes | — |
| Asynchronous Reset | Yes | — |
| Dynamic On-Chip Termination | Yes | — |
| ZQ Calibration | Yes | — |
| Write Leveling | Yes | — |
| CRC Function | Yes | — |
| RoHS 状态 | [DATA_NEEDED: RoHS status] | Compliant (lead-free / halogen-free per RDC suffix) |
| Density | — | 16 Gb (2 GB) |
| Supply Voltage VDD | — | 1.2 V |
| Prefetch | — | 16n (bank group architecture) |
| 特性 | — | Bank groups, CA parity, data CRC, ODT, DLL-off mode |
| Refresh | — | Self refresh, 8n refresh [DATA_NEEDED: 1x/2x/4x refresh option] |
| Operating Temperature (case) | — | -40C to +85C (industrial; extended to 95C per datasheet conditions) |
| Temperature Grade Suffix | — | RDC - industrial temperature, lead-free, halogen-free |
| VDDQ | — | 1.2 V |
| Product Family | — | SK hynix computing 16Gb DDR4 H5ANAG4(8_6)NBJR series |