H5ANAG8NBJR-RDC vs H5AN8G6NCJR-RDC 对比
详细并排对比 H5ANAG8NBJR-RDC 出自 SK hynix 和 H5AN8G6NCJR-RDC 出自 SK hynix。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况，以确定最适合您设计需求的元器件。
规格对比
| 参数 | H5ANAG8NBJR-RDC | H5AN8G6NCJR-RDC |
|---|---|---|
| 品牌 | SK hynix | SK hynix |
| 分类 | DRAM | Memory ICs |
| 生命周期状态 | 有效 | 有效 |
| 库存状态 | 有库存 | 有库存 |
| 单价（USD） | $3.55 | $19.69 |
| 存储器类型 | DDR4 SDRAM | DDR4 SDRAM |
| Density | 16 Gbit | — |
| 存储组织 | 2G x 8 | 512M x 16 |
| Supply Voltage (VDD) | 1.2 V | — |
| I/O Voltage (VDDQ) | 1.2 V | — |
| 接口 | SSTL12 | — |
| Speed Grade (suffix R) | DDR4-2666 class | — |
| 封装 | 78-ball FBGA | — |
| 安装类型 | Surface Mount | Surface Mount |
| Refresh | Self-refresh and auto-refresh (8K/64ms class per family datasheet) | — |
| Bank Groups | 4 (per 16Gb DDR4 family datasheet) | — |
| Data Strobe | DQS with read/write training | — |
| Data Bus Inversion | Supported (DBI) | — |
| CAS 延迟 | [DATA_NEEDED: CAS Latency] | — |
| 工作温度 | [DATA_NEEDED: Operating Temperature Range] | — |
| RoHS 状态 | Compliant (lead-free PBGA per family product data) | Lead-Free & Halogen-Free (RoHS Compliant, per H5AN8G6 family datasheet) |
| 生命周期状态 | Active | — |
| Memory Density | — | 8 Gb (8589934592 bit) |
| Technology | — | CMOS |
| Package Code | — | TFBGA (PBGA96) |
| Package Shape | — | Rectangular |
| Number of Terminals | — | 96 |
| Temperature Grade | — | OTHER |
| Data Rate Family | — | [DATA_NEEDED: specific speed grade Mbps] |
| Supply Voltage Class | — | [DATA_NEEDED: nominal VDD per datasheet speed bin] |
| 工作温度范围 | — | [DATA_NEEDED: min/max C per -RDC bin] |
| Auto Self-Refresh | — | Yes |
| Auto Precharge | — | Yes |
| Asynchronous Reset | — | Yes |
| Data Mask Function | — | Yes |
| Write Leveling | — | Yes |
| CRC | — | Yes |
| Dynamic On-Chip Termination | — | Yes |
| ZQ Calibration | — | Yes |