H5ANAG8NBJR-RDC vs H5AN8G6NCJR-RDC Comparación
Comparación detallada lado a lado de H5ANAG8NBJR-RDC por SK hynix y H5AN8G6NCJR-RDC por SK hynix. Compare las especificaciones clave, los parámetros eléctricos, el encapsulado, el estado del ciclo de vida, los precios y la disponibilidad para determinar el mejor componente para los requisitos de su diseño.
Comparación de especificaciones
| Parámetro | H5ANAG8NBJR-RDC | H5AN8G6NCJR-RDC |
|---|---|---|
| Marca | SK hynix | SK hynix |
| Categoría | DRAM | Memory ICs |
| Estado del ciclo de vida | Activo | Activo |
| Estado del stock | In Stock | In Stock |
| Precio unitario (USD) | $3,55 | $19,69 |
| Tipo de memoria | DDR4 SDRAM | DDR4 SDRAM |
| Density | 16 Gbit | — |
| Organización de memoria | 2G x 8 | 512M x 16 |
| Supply Voltage (VDD) | 1.2 V | — |
| I/O Voltage (VDDQ) | 1.2 V | — |
| Interfaz | SSTL12 | — |
| Speed Grade (suffix R) | DDR4-2666 class | — |
| Encapsulado | 78-ball FBGA | — |
| Tipo de montaje | Surface Mount | Surface Mount |
| Refresh | Self-refresh and auto-refresh (8K/64ms class per family datasheet) | — |
| Bank Groups | 4 (per 16Gb DDR4 family datasheet) | — |
| Data Strobe | DQS with read/write training | — |
| Data Bus Inversion | Supported (DBI) | — |
| Latencia CAS | [DATA_NEEDED: CAS Latency] | — |
| Temperatura de funcionamiento | [DATA_NEEDED: Operating Temperature Range] | — |
| Estado RoHS | Compliant (lead-free PBGA per family product data) | Lead-Free & Halogen-Free (RoHS Compliant, per H5AN8G6 family datasheet) |
| Estado del ciclo de vida | Active | — |
| Memory Density | — | 8 Gb (8589934592 bit) |
| Technology | — | CMOS |
| Package Code | — | TFBGA (PBGA96) |
| Package Shape | — | Rectangular |
| Number of Terminals | — | 96 |
| Temperature Grade | — | OTHER |
| Data Rate Family | — | [DATA_NEEDED: specific speed grade Mbps] |
| Supply Voltage Class | — | [DATA_NEEDED: nominal VDD per datasheet speed bin] |
| Rango de temperatura de funcionamiento | — | [DATA_NEEDED: min/max C per -RDC bin] |
| Auto Self-Refresh | — | Yes |
| Auto Precharge | — | Yes |
| Asynchronous Reset | — | Yes |
| Data Mask Function | — | Yes |
| Write Leveling | — | Yes |
| CRC | — | Yes |
| Dynamic On-Chip Termination | — | Yes |
| ZQ Calibration | — | Yes |