H5ANAG8NBJR-RDC vs H5ANAG4NBJR-RDC 对比
详细并排对比 H5ANAG8NBJR-RDC 出自 SK hynix 和 H5ANAG4NBJR-RDC 出自 SK hynix。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况，以确定最适合您设计需求的元器件。
规格对比
| 参数 | H5ANAG8NBJR-RDC | H5ANAG4NBJR-RDC |
|---|---|---|
| 品牌 | SK hynix | SK hynix |
| 分类 | DRAM | Memory ICs |
| 生命周期状态 | 有效 | 有效 |
| 库存状态 | 有库存 | 有库存 |
| 单价（USD） | $3.55 | $5.75 |
| 存储器类型 | DDR4 SDRAM | DDR4 SDRAM |
| Density | 16 Gbit | 16 Gb (2 GB) |
| 存储组织 | 2G x 8 | 4G x 4 |
| Supply Voltage (VDD) | 1.2 V | — |
| I/O Voltage (VDDQ) | 1.2 V | — |
| 接口 | SSTL12 | SSTL-12 |
| Speed Grade (suffix R) | DDR4-2666 class | — |
| 封装 | 78-ball FBGA | 78-ball FBGA |
| 安装类型 | Surface Mount | Surface Mount |
| Refresh | Self-refresh and auto-refresh (8K/64ms class per family datasheet) | Self refresh, 8n refresh [DATA_NEEDED: 1x/2x/4x refresh option] |
| Bank Groups | 4 (per 16Gb DDR4 family datasheet) | — |
| Data Strobe | DQS with read/write training | — |
| Data Bus Inversion | Supported (DBI) | — |
| CAS 延迟 | [DATA_NEEDED: CAS Latency] | — |
| 工作温度 | [DATA_NEEDED: Operating Temperature Range] | — |
| RoHS 状态 | Compliant (lead-free PBGA per family product data) | Compliant (lead-free / halogen-free per RDC suffix) |
| 生命周期状态 | Active | — |
| Supply Voltage VDD | — | 1.2 V |
| 数据速率 | — | 2666 MT/s (speed bin NBJR, [DATA_NEEDED: exact MT/s confirmation from datasheet]) |
| Prefetch | — | 16n (bank group architecture) |
| 特性 | — | Bank groups, CA parity, data CRC, ODT, DLL-off mode |
| Operating Temperature (case) | — | -40C to +85C (industrial; extended to 95C per datasheet conditions) |
| Temperature Grade Suffix | — | RDC - industrial temperature, lead-free, halogen-free |
| VDDQ | — | 1.2 V |
| Product Family | — | SK hynix computing 16Gb DDR4 H5ANAG4(8_6)NBJR series |