H5ANAG8NBJR-VKC vs H5ANAG4NBJR-VKC 对比
详细并排对比 H5ANAG8NBJR-VKC 出自 SK hynix 和 H5ANAG4NBJR-VKC 出自 SK hynix。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况，以确定最适合您设计需求的元器件。
规格对比
| 参数 | H5ANAG8NBJR-VKC | H5ANAG4NBJR-VKC |
|---|---|---|
| 品牌 | SK hynix | SK hynix |
| 分类 | Memory ICs | DRAM |
| 生命周期状态 | 有效 | 有效 |
| 库存状态 | 有库存 | 有库存 |
| 单价（USD） | $8.60 | $14.40 |
| 存储器类型 | DDR4 SDRAM | — |
| Density | 16 Gbit | 16 Gb |
| 存储组织 | 2G x 8 | — |
| Speed Grade | DDR4-2666 (2666 Mbps/pin) | VKC (commercial speed bin - see SK hynix part number decoder) |
| 电源电压 | 1.14 V to 1.26 V (VDDQ) | — |
| Clock Frequency | 1.6 GHz (internal interface per distributor data) | — |
| 工作温度 | 0C to +85C | — |
| 封装 | FBGA-78 | FBGA-78 (7.5 mm x 11 mm) |
| 安装类型 | Surface Mount | Surface Mount (BGA) |
| Standby Current | 30 mA (operating, per distributor listing) | — |
| Auto Self-Refresh | Yes | Yes |
| Data Mask Function | Yes | Yes |
| Dynamic On-Chip Termination | Yes | — |
| Asynchronous Reset | Yes | Yes |
| ZQ Calibration | Yes | Yes |
| Write Leveling | Yes | Yes |
| CRC Function | Yes | — |
| Auto Precharge | Yes | — |
| RoHS 状态 | Compliant, Lead-Free and Halogen-Free | Compliant (per distributor listing) |
| Refresh Interval | [DATA_NEEDED: tREFI refresh interval] | — |
| Product Type | — | DDR4 SDRAM |
| 工作温度范围 | — | -40 C to +95 C (case, industrial with auto self-refresh) |
| 数据速率 | — | [DATA_NEEDED: data rate (MT/s) for -VKC bin] |
| VDD Supply Voltage | — | [DATA_NEEDED: VDD supply voltage] |
| VDDQ Supply Voltage | — | [DATA_NEEDED: VDDQ supply voltage] |
| Dynamic ODT | — | Yes |
| CRC / CA Parity | — | Yes |
| Lead-Free | — | [DATA_NEEDED: lead-free status] |
| 无卤 | — | [DATA_NEEDED: halogen-free status] |