H5ANAG8NCMR-VKC vs H5ANAG8NCR-PBC 对比

详细并排对比 H5ANAG8NCMR-VKC 出自 SK hynix 和 H5ANAG8NCR-PBC 出自 SK hynix。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况,以确定最适合您设计需求的元器件。

SK hynix
H5ANAG8NCMR-VKC H5ANAG8NCMR-VKC - 16Gb DDR4-2666 x8 DRAM FBGA | SK hynix

H5ANAG8NCMR-VKC - 16Gb DDR4-2666 x8 DRAM FBGA | SK hynix

H5ANAG8NCMR-VKC ✓ 量产中
SK hynix
H5ANAG8NCR-PBC H5ANAG8NCR-PBC - 16Gb DDR4 SDRAM DRAM | SK hynix

H5ANAG8NCR-PBC - 16Gb DDR4 SDRAM DRAM | SK hynix

H5ANAG8NCR-PBC ✓ 量产中

规格对比

参数 H5ANAG8NCMR-VKC H5ANAG8NCR-PBC
品牌 SK hynix SK hynix
分类 Memory ICs DRAM
生命周期状态 有效 有效
库存状态 有库存 有库存
单价(USD) $8.05 $9.50
存储器类型 DDR4 SDRAM DDR4 SDRAM
存储容量 16 Gb —
Memory Organization 2G x 8 —
数据速率 2666 Mbps/pin (DDR4-2666) —
Supply Voltage (VDD) 1.2 V —
I/O Voltage (VDDQ) 1.2 V —
封装 FBGA-78 FBGA-78 (approximately 7.5 x 11 mm)
安装类型 Surface Mount Surface Mount
Speed Grade VK (per SK hynix speed-bin suffix) —
Power Class Normal Power —
Bank Groups 4 —
Banks Total 16 —
工作温度 [DATA_NEEDED: operating temperature range] [DATA_NEEDED: operating temperature range]
CAS 延迟 [DATA_NEEDED: CAS latency for VK speed bin] [DATA_NEEDED: CAS latency]
RoHS 状态 [DATA_NEEDED: RoHS status] Compliant (Lead-Free & Halogen-Free per SK hynix family datasheet)
Packaging [DATA_NEEDED: standard packing quantity] —
Manufacturer Process CMOS DRAM —
Memory Density — 16Gb (2 GB)
存储组织 — x8
电源电压 — 1.2 V (typical, DDR4 class)
接口类型 — Parallel, DDR4 (Double Data Rate 4)
Speed Grade Code — -PBC (SK hynix speed/temperature code; exact Mbps bin [DATA_NEEDED: speed bin value])
Clock Frequency — [DATA_NEEDED: clock frequency]
Bank Group Architecture — Yes (DDR4 bank groups)
On-Die Termination (ODT) — Yes (DDR4 standard feature)
Self-Refresh — Yes (DDR4 standard feature)
Process Technology — CMOS
Application Class — Main memory (server, industrial, networking, PC)

数据手册与资源

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