H5ANAG8NCR-PBC vs H5ANAG8NBJR-PBC 对比
详细并排对比 H5ANAG8NCR-PBC 出自 SK hynix 和 H5ANAG8NBJR-PBC 出自 SK hynix。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况，以确定最适合您设计需求的元器件。
规格对比
| 参数 | H5ANAG8NCR-PBC | H5ANAG8NBJR-PBC |
|---|---|---|
| 品牌 | SK hynix | SK hynix |
| 分类 | DRAM | DRAM |
| 生命周期状态 | 有效 | 有效 |
| 库存状态 | 有库存 | 有库存 |
| 单价（USD） | $9.50 | $31.50 |
| Memory Density | 16Gb (2 GB) | — |
| 存储器类型 | DDR4 SDRAM | DDR4 SDRAM |
| 存储组织 | x8 | x8 |
| 电源电压 | 1.2 V (typical, DDR4 class) | — |
| 接口类型 | Parallel, DDR4 (Double Data Rate 4) | Parallel, SSTL12 |
| 封装 | FBGA-78 (approximately 7.5 x 11 mm) | FBGA-78 (7.5 mm x 11 mm) |
| 安装类型 | Surface Mount | Surface Mount |
| Speed Grade Code | -PBC (SK hynix speed/temperature code; exact Mbps bin [DATA_NEEDED: speed bin value]) | — |
| Clock Frequency | [DATA_NEEDED: clock frequency] | — |
| CAS 延迟 | [DATA_NEEDED: CAS latency] | — |
| 工作温度 | [DATA_NEEDED: operating temperature range] | [DATA_NEEDED: operating temperature range] |
| Bank Group Architecture | Yes (DDR4 bank groups) | — |
| On-Die Termination (ODT) | Yes (DDR4 standard feature) | — |
| Self-Refresh | Yes (DDR4 standard feature) | — |
| RoHS 状态 | Compliant (Lead-Free & Halogen-Free per SK hynix family datasheet) | Compliant (Lead-Free & Halogen-Free per Hynix family datasheet) |
| Process Technology | CMOS | — |
| Application Class | Main memory (server, industrial, networking, PC) | — |
| Density | — | 16 Gbit (2 GB) |
| Supply Voltage (VDD) | — | 1.2 V |
| Speed Grade / Data Rate | — | PBC suffix, DDR4-2666 class |
| Bank Architecture | — | 16 banks in 4 bank groups (DDR4 standard) |
| Prefetch | — | 8n |
| CAS Latency (typical bin) | — | [DATA_NEEDED: CAS latency] |
| Refresh | — | Self refresh, 1x/2x/4x refresh modes |
| Die Revision | — | BJR |
| MSL 等级 | — | [DATA_NEEDED: moisture sensitivity level] |
| Standard Package Quantity | — | [DATA_NEEDED: standard quantity] |