H5TC4G63CFR-H9A vs IS43TR16256AL-125KBL 对比

详细并排对比 H5TC4G63CFR-H9A 出自 SK hynix 和 IS43TR16256AL-125KBL 出自 ISSI, Integrated Silicon Solution Inc。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况,以确定最适合您设计需求的元器件。

SK hynix
H5TC4G63CFR-H9A H5TC4G63CFR-H9A - 4Gb DDR3L SDRAM 96-FBGA | SK hynix

H5TC4G63CFR-H9A - 4Gb DDR3L SDRAM 96-FBGA | SK hynix

H5TC4G63CFR-H9A ✓ 量产中
ISSI, Integrated Silicon Solution Inc
IS43TR16256AL-125KBL IS43TR16256AL-125KBL - 4Gb DDR3L SDRAM 256Mx16 | ISSI

IS43TR16256AL-125KBL - 4Gb DDR3L SDRAM 256Mx16 | ISSI

IS43TR16256AL-125KBL ✓ 量产中

规格对比

参数 H5TC4G63CFR-H9A IS43TR16256AL-125KBL
品牌 SK hynix ISSI, Integrated Silicon Solution Inc
分类 Memory ICs Memory ICs
生命周期状态 有效 有效
库存状态 有库存 有库存
单价(USD) $6.50 $5.60
存储器类型 DDR3L SDRAM SDRAM - DDR3L
Memory Density 4Gb (4294967296 bit) —
存储组织 256M x 16 —
Supply Voltage (VDD) 1.35V + 0.100 / - 0.067V —
Supply Voltage (VDDQ) 1.35V + 0.100 / - 0.067V —
封装 96-ball TFBGA 96-TWBGA (9x13mm)
Number of Terminals 96 96
Package Shape RECTANGULAR —
工作温度范围 [DATA_NEEDED: Operating temperature range] —
RoHS 状态 Compliant Compliant
Lead-Free Yes Yes
无卤 Yes —
数据速率 [DATA_NEEDED: Data rate (e.g., 1866 Mbps)] 1600 Mbps
CAS 延迟 [DATA_NEEDED: CAS latency] —
Burst Length 8, 4 (with burst chop) —
Differential Clock Inputs Yes (CK, CK) —
Differential Data Strobe Yes (DQS, DQS) —
On-Chip DLL Yes —
DM (Data Mask) Yes —
存储容量 — 4Gbit (256M x 16)
接口 — Parallel
Clock Frequency — 800 MHz
Access Time — 20 ns
电源电压 — 1.35V (backward compatible to 1.5V)
安装类型 — Surface Mount
工作温度 — 0°C ~ 95°C
Memory Format — DRAM
Technology — SDRAM - DDR3L

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