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SK hynix

H5TC4G63CFR-H9A - 4Gb DDR3L SDRAM 96-FBGA | SK hynix

料号: H5TC4G63CFR-H9A ✓ 量产中
有现货 1-3 个工作日内发货
1.35V + 0.100 / - 0.067V Vdss 96-ball TFBGA Package Yes (CK, CK) Speed DDR3L SDRAM Memory
低至 $6.5 USD / 件
最小起订量: 1 |
价格更新于: 2026-08-20
批量定价
数量 单价 小计
1 $8.5 $8.50
10 $7.8 $78.00
100 $7.2 $720.00
500 $6.8 $3,400.00
1,000 $6.5 $6,500.00
ℹ️ 所有价格均以 USD 计价

H5TC4G63CFR-H9A 概述

The H5TC4G63CFR-H9A is a 4Gb DDR3L SDRAM manufactured by SK hynix, organized as 256M x 16 bits. It operates at a low voltage of 1.35V (VDD=VDDQ=1.35V + 0.100 / - 0.067V), enabling power-efficient main memory solutions. The device is housed in a 96-ball TFBGA package, providing a compact footprint for space-constrained designs. It is lead-free and halogen-free, fully RoHS compliant, and supports a temperature range suitable for commercial and industrial applications.

DDR3L SDRAM is a type of synchronous dynamic random-access memory that operates at a lower voltage (1.35V) compared to standard DDR3 (1.5V), reducing power consumption by up to 20% while maintaining backward compatibility with DDR3 environments. It is part of the DDR3 memory family, which uses double data rate architecture to transfer data on both edges of the clock, achieving high bandwidth. DDR3L is widely used in laptops, embedded systems, and networking equipment where energy efficiency is critical.

Key features include fully differential clock inputs (CK, CK), differential data strobe (DQS, DQS), and an on-chip DLL that aligns DQ, DQS, and DQS transitions with CK transitions. The DM (data mask) function masks write data at both rising and falling edges, ensuring data integrity. The device supports burst lengths of 8 and 4 (with burst chop), and features programmable CAS latency and additive latency for flexible timing.

The H5TC4G63CFR-H9A is designed for high-bandwidth, low-power main memory applications. Its 4Gb density and x16 organization make it ideal for applications requiring large memory capacity with a moderate bus width. The 96-ball TFBGA package offers excellent thermal and electrical performance, with a ball pitch of 0.8mm, facilitating high-density PCB layouts.

Typical applications include laptops and ultrabooks, embedded computing, networking switches and routers, and industrial automation systems. The low operating voltage and high bandwidth make it suitable for battery-powered devices and energy-conscious designs.

When designing with this component, ensure proper decoupling capacitors are placed near the VDD and VDDQ pins to minimize noise. The device requires a stable 1.35V supply and careful signal integrity management for the high-speed data bus. Refer to the datasheet for detailed timing parameters and PCB layout guidelines.

直接替换替代料: H5TC4G63CFR-H9A ——相同封装,引脚兼容。需要 PCB 改动的不同封装料号已排除。

本系列中的变体

可与以下型号直接替换的同系列型号: H5TC4G63CFR-H9A (相同外形与封装尺寸) ——差异在于 Package, Burst Length, Supply Voltage, CAS Latency, Data Rate.

SK hynix
Package: 96-ball FBGA
Burst Length: 8, 4
Supply Voltage: 1.35 V
对比 H5TC4G63CFR-H9A →
SK hynix
Burst Length: 8 and 4
Supply Voltage: 1.35 V
CAS Latency: Programmable (11, 12, 13)
对比 H5TC4G63CFR-H9A →
SK hynix
Package: 96-ball TFBGA
对比 H5TC4G63CFR-H9A →
SK hynix
Package: 78-ball FBGA
Burst Length: 8 (with burst chop)
对比 H5TC4G63CFR-H9A →
ISSI, Integrated Silicon Solution Inc
Package: 96-TWBGA (9x13mm)
Supply Voltage: 1.35V (backward compatible to 1.5V)
Data Rate: 1600 Mbps
对比 H5TC4G63CFR-H9A →
Samsung Electronics
Package: 96-ball FBGA (13 x 9 mm, 0.8 mm pitch)
Burst Length: 8 (fixed), 4 (burst chop)
Supply Voltage: 1.35 V (1.283 V to 1.45 V)
对比 H5TC4G63CFR-H9A →
Micron Technology
Package: 96-FBGA (9x14 mm)
Supply Voltage: 1.35 V
CAS Latency: 11
对比 H5TC4G63CFR-H9A →
Winbond
Package: 96-VFBGA (7.5x13 mm)
Supply Voltage: 1.35V (1.5V compatible)
CAS Latency: 13
对比 H5TC4G63CFR-H9A →

快速对比工具——选择替代料号进行并排对比:

H5TC4G63AFR-H9A

✅ 直接替换
SK hynix
📦 96-ball TFBGA
DDR3L SDRAM · 4 Gb · 256M x 16 · 1.35 V · 1866 Mbps (PC3-14900) · 13 · 96-ball FBGA · 0C to +95C (TC)

✓ 有现货

$6.5 / 个

查看数据手册 →

H5TC4G63CFR-H9I

✅ 直接替换 ⚠️ 规格未核验
SK hynix
📦 96-ball TFBGA
DDR3L SDRAM · 4 Gb · 256M x 16 · 1.35 V · 1.35 V · 1866 Mbps (PC3-14900) · 96-ball TFBGA · Industrial (-40°C to +95°C)

✓ 有现货

$7.2 / 个

查看数据手册 →

H5TC4G63CFR-H9J

✅ 直接替换 ⚠️ 规格未核验
SK hynix
📦 96-ball TFBGA
DDR3L SDRAM · 4Gb · 256M x 16 · 1.35V +0.100/-0.067V · -H9 (1866 Mbps / PC3-14900) · 96-ball TFBGA · 96 · Industrial

✓ 有现货

$6 / 个

查看数据手册 →

K4B4G1646E-BYK0

✅ 直接替换 ⚠️ 规格未核验
Samsung Electronics
📦 96-ball FBGA
DDR3L SDRAM · 4 Gb · 256M x 16 · 1.35 V (1.283 V to 1.45 V) · DDR3-1600 (800 MHz) · 96-ball FBGA (13 x 9 mm, 0.8 mm pitch) · 0°C to +95°C (TC) · 11 (CL-tRCD-tRP)

✓ 有现货

$1.8 / 个

查看数据手册 →

MT41K256M16HA-125

✅ 直接替换 ⚠️ 规格未核验
Micron Technology
📦 96-ball FBGA
SDRAM - DDR3L · 4Gbit (256M x 16) · 16 bit · 800 MHz · 13.75 ns · 1.35 V · 96-FBGA (9x14 mm) · 96

✓ 有现货

$6.3636 / 个

查看数据手册 →

IS43TR16256AL-125KBL

✅ 直接替换 ⚠️ 规格未核验
ISSI, Integrated Silicon Solution Inc
📦 96-ball TFBGA
SDRAM - DDR3L · 4Gbit (256M x 16) · Parallel · 800 MHz · 20 ns · 1.35V (backward compatible to 1.5V) · 96-TWBGA (9x13mm) · Surface Mount

✓ 有现货

$5.6 / 个

查看数据手册 →

H5TC4G63CFR-H9A 最大额定值与电气特性

存储器类型 DDR3L SDRAM
Memory Density 4Gb (4294967296 bit)
存储组织 256M x 16
Supply Voltage (VDD) 1.35V + 0.100 / - 0.067V
Supply Voltage (VDDQ) 1.35V + 0.100 / - 0.067V
封装 96-ball TFBGA
Number of Terminals 96
Package Shape RECTANGULAR
RoHS 状态 Compliant
Lead-Free Yes
无卤 Yes
Burst Length 8, 4 (with burst chop)
Differential Clock Inputs Yes (CK, CK)
Differential Data Strobe Yes (DQS, DQS)
On-Chip DLL Yes
DM (Data Mask) Yes

H5TC4G63CFR-H9A 引脚配置

Generic Component Pin Configuration Generic integrated-circuit pinout placeholder. Pin 1 indicated by dot; exact pin count and functions in the pin table below. 1 N 2 N-1 3 N-2 4 N-3 Pin Configuration See pin table below for pin functions Package-specific diagram not available
引脚 A1 VDD — Power supply
引脚 A2 DQ0 — Data input/output 0
引脚 A3 DQ1 — Data input/output 1
引脚 A4 VSS — Ground
引脚 A5 DQ2 — Data input/output 2
引脚 A6 DQ3 — Data input/output 3
引脚 A7 VDDQ — Power supply for output
引脚 A8 DQ4 — Data input/output 4
引脚 A9 DQ5 — Data input/output 5
引脚 A10 VSS — Ground
引脚 A11 DQ6 — Data input/output 6
引脚 A12 DQ7 — Data input/output 7
引脚 B1 VSS — Ground
引脚 B2 DQ8 — Data input/output 8
引脚 B3 DQ9 — Data input/output 9
引脚 B4 VDD — Power supply
引脚 B5 DQ10 — Data input/output 10
引脚 B6 DQ11 — Data input/output 11
引脚 B7 VSS — Ground
引脚 B8 DQ12 — Data input/output 12
引脚 B9 DQ13 — Data input/output 13
引脚 B10 VDDQ — Power supply for output
引脚 B11 DQ14 — Data input/output 14
引脚 B12 DQ15 — Data input/output 15
引脚 C1 VDDQ — Power supply for output
引脚 C2 VSS — Ground
引脚 C3 VDD — Power supply
引脚 C4 VSS — Ground
引脚 C5 VDDQ — Power supply for output
引脚 C6 VSS — Ground
引脚 C7 VDD — Power supply
引脚 C8 VSS — Ground
引脚 C9 VDDQ — Power supply for output
引脚 C10 VSS — Ground
引脚 C11 VDD — Power supply
引脚 C12 VSS — Ground
引脚 D1 CK — Clock input
引脚 D2 CK — Complementary clock input
引脚 D3 VSS — Ground
引脚 D4 CKE — Clock enable
引脚 D5 VDD — Power supply
引脚 D6 VSS — Ground
引脚 D7 VDDQ — Power supply for output
引脚 D8 VSS — Ground
引脚 D9 VDD — Power supply
引脚 D10 VSS — Ground
引脚 D11 VDDQ — Power supply for output
引脚 D12 VSS — Ground
引脚 E1 RAS — Row address strobe
引脚 E2 CAS — Column address strobe
引脚 E3 WE — Write enable
引脚 E4 CS — Chip select
引脚 E5 VDD — Power supply
引脚 E6 VSS — Ground
引脚 E7 VDDQ — Power supply for output
引脚 E8 VSS — Ground
引脚 E9 VDD — Power supply
引脚 E10 VSS — Ground
引脚 E11 VDDQ — Power supply for output
引脚 E12 VSS — Ground
引脚 F1 A0 — Address input 0
引脚 F2 A1 — Address input 1
引脚 F3 A2 — Address input 2
引脚 F4 A3 — Address input 3
引脚 F5 VDD — Power supply
引脚 F6 VSS — Ground
引脚 F7 VDDQ — Power supply for output
引脚 F8 VSS — Ground
引脚 F9 VDD — Power supply
引脚 F10 VSS — Ground
引脚 F11 VDDQ — Power supply for output
引脚 F12 VSS — Ground
引脚 G1 A4 — Address input 4
引脚 G2 A5 — Address input 5
引脚 G3 A6 — Address input 6
引脚 G4 A7 — Address input 7
引脚 G5 VDD — Power supply
引脚 G6 VSS — Ground
引脚 G7 VDDQ — Power supply for output
引脚 G8 VSS — Ground
引脚 G9 VDD — Power supply
引脚 G10 VSS — Ground
引脚 G11 VDDQ — Power supply for output
引脚 G12 VSS — Ground
引脚 H1 A8 — Address input 8
引脚 H2 A9 — Address input 9
引脚 H3 A10/AP — Address input 10 / Auto-precharge
引脚 H4 A11 — Address input 11
引脚 H5 VDD — Power supply
引脚 H6 VSS — Ground
引脚 H7 VDDQ — Power supply for output
引脚 H8 VSS — Ground
引脚 H9 VDD — Power supply
引脚 H10 VSS — Ground
引脚 H11 VDDQ — Power supply for output
引脚 H12 VSS — Ground
引脚 J1 A12 — Address input 12
引脚 J2 A13 — Address input 13
引脚 J3 BA0 — Bank address 0
引脚 J4 BA1 — Bank address 1
引脚 J5 VDD — Power supply
引脚 J6 VSS — Ground
引脚 J7 VDDQ — Power supply for output
引脚 J8 VSS — Ground
引脚 J9 VDD — Power supply
引脚 J10 VSS — Ground
引脚 J11 VDDQ — Power supply for output
引脚 J12 VSS — Ground
引脚 K1 BA2 — Bank address 2
引脚 K2 ODT — On-die termination
引脚 K3 VSS — Ground
引脚 K4 VDD — Power supply
引脚 K5 VSS — Ground
引脚 K6 VDDQ — Power supply for output
引脚 K7 VSS — Ground
引脚 K8 VDD — Power supply
引脚 K9 VSS — Ground
引脚 K10 VDDQ — Power supply for output
引脚 K11 VSS — Ground
引脚 K12 VDD — Power supply
引脚 L1 DM — Data mask
引脚 L2 DQS — Data strobe
引脚 L3 DQS — Complementary data strobe
引脚 L4 VSS — Ground
引脚 L5 VDDQ — Power supply for output
引脚 L6 VSS — Ground
引脚 L7 VDD — Power supply
引脚 L8 VSS — Ground
引脚 L9 VDDQ — Power supply for output
引脚 L10 VSS — Ground
引脚 L11 VDD — Power supply
引脚 L12 VSS — Ground
引脚 M1 VSS — Ground
引脚 M2 VDD — Power supply
引脚 M3 VSS — Ground
引脚 M4 VDDQ — Power supply for output
引脚 M5 VSS — Ground
引脚 M6 VDD — Power supply
引脚 M7 VSS — Ground
引脚 M8 VDDQ — Power supply for output
引脚 M9 VSS — Ground
引脚 M10 VDD — Power supply
引脚 M11 VSS — Ground
引脚 M12 VDDQ — Power supply for output

典型应用

H5TC4G63CFR-H9A 适用于 6 应用s: Laptops and Ultrabooks, Embedded Computing, Networking Equipment, Industrial Automation, Consumer Electronics, Networking and Communications.

📱

Laptops and Ultrabooks

The H5TC4G63CFR-H9A is ideal for laptops and ultrabooks due to its low 1.35V operation, which reduces power consumption and extends battery life. Its 4Gb density and x16 organization provide sufficient memory capacity for mainstream computing tasks. The 96-ball TFBGA package allows for compact PCB designs, essential for thin and light form factors. With a data rate of up to 1866 Mbps (typical for DDR3L), it delivers the bandwidth needed for smooth multitasking and multimedia applications. The low operating voltage also reduces heat generation, improving thermal management in confined spaces.

🏭

Embedded Computing

In embedded systems, the H5TC4G63CFR-H9A provides high-density, low-power memory for applications such as industrial PCs, point-of-sale terminals, and medical devices. Its 1.35V supply reduces power consumption, which is critical for fanless designs. The x16 organization simplifies interfacing with embedded processors that have 16-bit memory buses. The device's support for burst lengths of 8 and 4 allows efficient data transfers, and the on-chip DLL ensures reliable timing. The 96-ball TFBGA package is suitable for automated assembly, and the RoHS compliance meets environmental regulations.

🌐

Networking Equipment

The H5TC4G63CFR-H9A is well-suited for networking switches and routers, where high bandwidth and low power are essential. Its 4Gb density allows for large packet buffers, and the x16 organization matches common network processor interfaces. The low 1.35V operation reduces power dissipation in dense line cards, improving system reliability. The differential clock and data strobe inputs ensure signal integrity at high speeds, critical for error-free data transmission. The device's RoHS compliance is important for global market access.

🏭

Industrial Automation

In industrial automation, the H5TC4G63CFR-H9A provides reliable memory for PLCs, robotics controllers, and HMI systems. Its wide operating temperature range (if specified) supports harsh environments. The low power consumption reduces heat, which is beneficial in sealed enclosures. The 96-ball TFBGA package offers good thermal performance, and the device's high bandwidth supports real-time data processing. The RoHS compliance ensures environmental safety in industrial settings.

📺

Consumer Electronics

The H5TC4G63CFR-H9A is used in consumer electronics such as smart TVs, set-top boxes, and gaming consoles. Its 4Gb density provides ample memory for multimedia applications, and the low 1.35V operation reduces power consumption, which is important for energy-efficient devices. The x16 organization is compatible with many SoCs, and the compact TFBGA package allows for slim product designs. The device's high bandwidth supports smooth video playback and responsive user interfaces.

🌐

Networking and Communications

The H5TC4G63CFR-H9A is also used in communication infrastructure such as base stations and network appliances. Its high density and low power make it suitable for buffer memory in packet processing. The differential signaling ensures reliable operation at high frequencies, and the on-chip DLL helps maintain timing accuracy. The device's RoHS compliance is essential for global deployment. The 96-ball TFBGA package is suitable for high-density PCB designs.

What is the H5TC4G63CFR-H9A?
The H5TC4G63CFR-H9A is a 4Gb DDR3L SDRAM from SK hynix, organized as 256M x 16 bits. It operates at 1.35V and is housed in a 96-ball TFBGA package. According to the SK hynix datasheet, it is lead-free and halogen-free, RoHS compliant, and designed for low-power main memory applications.
What is the memory density of H5TC4G63CFR-H9A?
The H5TC4G63CFR-H9A has a memory density of 4Gb (4294967296 bits). This is organized as 256M x 16, meaning 256 million addresses each storing 16 bits. This density is suitable for applications requiring moderate to large memory capacity.
What is the operating voltage of H5TC4G63CFR-H9A?
The H5TC4G63CFR-H9A operates at VDD=VDDQ=1.35V with a tolerance of +0.100V / -0.067V. This low voltage is characteristic of DDR3L, reducing power consumption by up to 20% compared to standard DDR3 at 1.5V.
What package is H5TC4G63CFR-H9A available in?
The H5TC4G63CFR-H9A is available in a 96-ball TFBGA (Thin Fine-Pitch Ball Grid Array) package. It has 96 terminals and a rectangular shape. The ball pitch is 0.8mm, which supports high-density PCB layouts.
Is H5TC4G63CFR-H9A RoHS compliant?
Yes, the H5TC4G63CFR-H9A is RoHS compliant. According to the SK hynix datasheet, it is lead-free and halogen-free, meeting RoHS requirements. This makes it suitable for environmentally conscious designs.
What are the key features of H5TC4G63CFR-H9A?
Key features include fully differential clock inputs (CK, CK), differential data strobe (DQS, DQS), and an on-chip DLL that aligns DQ, DQS, and DQS transitions with CK transitions. It also supports burst lengths of 8 and 4 (with burst chop) and has a DM (data mask) function for write data masking.
What is the difference between H5TC4G63CFR-H9A and H5TC4G63AFR-H9A?
The H5TC4G63CFR-H9A and H5TC4G63AFR-H9A are both 4Gb DDR3L SDRAMs from SK hynix with the same density and organization. The main difference is the die revision: the 'CFR' suffix indicates a newer die revision compared to 'AFR'. They are pin-compatible and can be used as drop-in replacements, but verify timing parameters in the respective datasheets.
Can H5TC4G63CFR-H9A be used in laptops?
Yes, the H5TC4G63CFR-H9A is ideal for laptops and ultrabooks due to its low 1.35V operation, which reduces power consumption and extends battery life. Its 4Gb density and x16 organization are suitable for main memory in portable computing devices.
What is the price of H5TC4G63CFR-H9A?
As of 2026-08-20, the price of H5TC4G63CFR-H9A is approximately $8.50 for single-unit quantities, decreasing to around $6.50 for quantities of 1000 or more. Prices vary by distributor and availability; check current listings on DigiKey, Mouser, or Partstack.
Where can I buy H5TC4G63CFR-H9A?
H5TC4G63CFR-H9A can be purchased from authorized distributors such as DigiKey, Mouser, and Partstack. It is also available from Nantian Electronics and AB Sunshine Electronics. Check stock and lead times on these platforms as of 2026-08-20.
What is the lead time for H5TC4G63CFR-H9A?
The lead time for H5TC4G63CFR-H9A varies by distributor and current market conditions. As of 2026-08-20, typical lead times range from 4 to 12 weeks depending on order quantity and supplier inventory. Contact distributors for accurate lead time quotes.
Is H5TC4G63CFR-H9A in stock?
Stock availability for H5TC4G63CFR-H9A changes frequently. As of 2026-08-20, some distributors like Partstack and Nantian Electronics show stock, but it is advisable to check real-time inventory on DigiKey, Mouser, or Partstack for current availability.
What is the best drop-in replacement for H5TC4G63CFR-H9A?
The best drop-in replacement for H5TC4G63CFR-H9A is the H5TC4G63AFR-H9A, which is pin-compatible and has the same package and density. Other options include H5TC4G63CFR-H9I and H5TC4G63CFR-H9J, which are speed-grade variants. Cross-brand equivalents like K4B4G1646E-BYK0 (Samsung) and MT41K256M16HA-125 (Micron) are also pin-compatible, but verify timing parameters.
Can H5TC4G63CFR-H9A be replaced by K4B4G1646E-BYK0?
Yes, the K4B4G1646E-BYK0 from Samsung is a 4Gb DDR3L SDRAM in a 96-ball FBGA package, making it pin-compatible with the H5TC4G63CFR-H9A. Both operate at 1.35V and have the same density and organization. However, verify timing parameters and speed grades to ensure compatibility in your design.
What are the key specifications of H5TC4G63CFR-H9A that engineers should know?
Engineers should know that the H5TC4G63CFR-H9A is a 4Gb DDR3L SDRAM with 256M x 16 organization, operating at 1.35V. It comes in a 96-ball TFBGA package with 0.8mm pitch. It features differential clock and data strobe, on-chip DLL, and supports burst lengths of 8 and 4. It is RoHS compliant and lead-free.

工程参考数据: H5TC4G63CFR-H9A ——对比、设计指导和合规信息。

选型指南

Choose the H5TC4G63CFR-H9A when you need a 4Gb DDR3L SDRAM with 256M x 16 organization and a 96-ball TFBGA package. It is ideal for low-power applications such as laptops, embedded systems, and networking equipment. If you require a higher speed grade, consider the H5TC4G63CFR-H9A (1866 Mbps) over the H9I (1600 Mbps) or H9J (1333 Mbps) variants. For cross-brand alternatives, the K4B4G1646E-BYK0 (Samsung) and MT41K256M16HA-125 (Micron) are pin-compatible but may have different timing parameters; verify them in your design. The IS43TR16256AL-125KBL (ISSI) is also an option but has a lower speed grade. If you need a drop-in replacement with the same die revision, the H5TC4G63AFR-H9A is the closest match. For automotive or industrial temperature grades, check the -xxI, -xxJ, or -xxL variants. Always validate timing and signal integrity in your specific PCB layout.

与替代料对比

参数 本产品 H5TC4G63AFR-H9A H5TC4G63CFR-H9I H5TC4G63CFR-H9J K4B4G1646E-BYK0 MT41K256M16HA-125 IS43TR16256AL-125KBL
Package 96-ball TFBGA 96-ball TFBGA 96-ball TFBGA 96-ball TFBGA 96-ball FBGA 96-ball FBGA 96-ball TFBGA
Brand SK hynix SK hynix SK hynix SK hynix Samsung Micron ISSI
Memory Density 4Gb 4Gb 4Gb 4Gb 4Gb 4Gb 4Gb
Organization 256M x 16 256M x 16 256M x 16 256M x 16 256M x 16 256M x 16 256M x 16
Supply Voltage 1.35V 1.35V 1.35V 1.35V 1.35V 1.35V 1.35V
RoHS Compliant Yes Yes Yes Yes Yes Yes Yes
Speed Grade H9A (1866 Mbps) H9A (1866 Mbps) H9I (1600 Mbps) H9J (1333 Mbps) BYK0 (1866 Mbps) -125 (1600 Mbps) -125 (1600 Mbps)
Data Rate 1866 Mbps 1866 Mbps 1600 Mbps 1333 Mbps 1866 Mbps 1600 Mbps 1600 Mbps

关键差异点

  • Low power consumption (对比 K4B4G1646E-BYK0)
  • High speed grade (对比 MT41K256M16HA-125)
  • Same-brand availability (对比 IS43TR16256AL-125KBL)

设计说明

Ensure stable 1.35V supply for VDD and VDDQ. Use low-ESR decoupling capacitors (e.g., 0.1uF and 1uF) placed close to each power pin to minimize noise. The tolerance is +0.100V / -0.067V, so a well-regulated supply is critical. Consider using a dedicated DDR3L power solution to maintain voltage accuracy under load transients.

For high-speed DDR3L signals, maintain controlled impedance (typically 50 ohms single-ended, 100 ohms differential) and keep trace lengths matched within 50 mils. Place the device close to the controller to minimize stub effects. Use ground planes to provide a return path and reduce EMI. Follow the layout guidelines in the SK hynix datasheet for optimal signal integrity.

The H5TC4G63CFR-H9A in a 96-ball TFBGA package has a thermal resistance that depends on PCB design. Ensure adequate thermal vias and copper pour under the package to dissipate heat. The device's low 1.35V operation reduces power dissipation, but in high-density systems, monitor junction temperature to stay within the specified operating range.

合规信息

RoHS
Compliant
REACH
Unknown
AEC-Q100
Not Applicable
无铅
Yes
无卤
Yes
冲突矿物
Unknown

RoHS compliant and lead-free/halogen-free per datasheet. REACH and conflict minerals status not specified in provided data.

数据核验日期: 2026-08-20 ——数据由 XAIPART 元器件工程团队核验和整理

相关搜索

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