H5TC4G63CFR-H9J vs H5TC4G63CFR-H9I 对比

详细并排对比 H5TC4G63CFR-H9J 出自 SK hynix 和 H5TC4G63CFR-H9I 出自 SK hynix。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况,以确定最适合您设计需求的元器件。

SK hynix
H5TC4G63CFR-H9J H5TC4G63CFR-H9J - 4Gb DDR3L SDRAM 96-Ball TFBGA | SK Hynix

H5TC4G63CFR-H9J - 4Gb DDR3L SDRAM 96-Ball TFBGA | SK Hynix

H5TC4G63CFR-H9J ✓ 量产中
SK hynix
H5TC4G63CFR-H9I H5TC4G63CFR-H9I - 4Gb DDR3L SDRAM 256Mx16 | SK hynix

H5TC4G63CFR-H9I - 4Gb DDR3L SDRAM 256Mx16 | SK hynix

H5TC4G63CFR-H9I ✓ 量产中

规格对比

参数 H5TC4G63CFR-H9J H5TC4G63CFR-H9I
品牌 SK hynix SK hynix
分类 Memory ICs Memory ICs
生命周期状态 有效 有效
库存状态 有库存 有库存
单价(USD) $6.00 $7.20
存储器类型 DDR3L SDRAM DDR3L SDRAM
Density 4Gb 4 Gb
存储组织 256M x 16 256M x 16
Supply Voltage (VDD/VDDQ) 1.35V +0.100/-0.067V —
Speed Grade -H9 (1866 Mbps / PC3-14900) —
封装 96-ball TFBGA 96-ball TFBGA
Number of Terminals 96 96
Temperature Grade Industrial Industrial (-40°C to +95°C)
Lead-Free Yes Yes
无卤 Yes Yes
RoHS Compliant Yes Yes
Clock Input Fully differential (CK, CK) —
Data Strobe Differential (DQS, DQS) —
On-Chip DLL Yes —
Data Mask (DM) Yes —
电源电压 — 1.35 V
I/O Voltage — 1.35 V
数据速率 — 1866 Mbps (PC3-14900)
Memory Width — 16 bits
CAS 延迟 — Programmable (11, 12, 13)
Burst Length — 8 and 4
On-Die Termination — Yes
Refresh Modes — Auto-refresh, Self-refresh

数据手册与资源

浏览全部产品 创建 BOM 获取报价