H5TC4G63MFR-PBA vs MT41K256M16HA-15EM:E 对比
详细并排对比 H5TC4G63MFR-PBA 出自 SK hynix 和 MT41K256M16HA-15EM:E 出自 Micron Technology。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况，以确定最适合您设计需求的元器件。
Micron Technology
MT41K256M16HA-15EM:E - 4Gb DDR3L SDRAM 256Mx16 | Micron
MT41K256M16HA-15EM:E ✓ 量产中规格对比
| 参数 | H5TC4G63MFR-PBA | MT41K256M16HA-15EM:E |
|---|---|---|
| 品牌 | SK hynix | Micron Technology |
| 分类 | Memory ICs | Memory ICs |
| 生命周期状态 | 有效 | 有效 |
| 库存状态 | 有库存 | 有库存 |
| 单价（USD） | $6.50 | $5.95 |
| 存储器类型 | DDR3L SDRAM | DDR3L SDRAM |
| Density | 4 Gb | 4 Gbit |
| 存储组织 | 256M x 16 | 256M x 16 |
| Supply Voltage (VDD/VDDQ) | 1.35V (+0.100V/-0.067V) | — |
| 数据速率 | 1866 Mbps (PC3L-14900) | 1333 Mbps (DDR3L-1333) |
| 封装 | 96-ball FBGA | 96-ball FBGA (9x14mm) |
| Number of Banks | 8 | — |
| Burst Length | BL8, BL4 (with burst chop) | — |
| CAS Latency (CL) | Programmable | — |
| CAS Write Latency (CWL) | Programmable | — |
| Additive Latency | Programmable | — |
| On-Die Termination (ODT) | Yes | — |
| ZQ Calibration | Yes | — |
| Write Leveling | Yes | — |
| Auto Self-Refresh | Yes | — |
| Temperature-Compensated Self-Refresh | Yes | — |
| Process Technology | 30nm-class | — |
| RoHS Compliant | Yes (Lead-Free & Halogen-Free) | — |
| 电源电压 | — | 1.35 V (1.5V compatible) |
| CAS 延迟 | — | 15 |
| 安装类型 | — | Surface Mount |
| 工作温度 | — | [DATA_NEEDED: operating temperature range] |
| RoHS 状态 | — | Compliant |
| Lead-Free | — | Yes |
| 引脚数 | — | 96 |
| Access Time | — | 13.75 ns |
| Clock Frequency | — | 800 MHz |
| 接口 | — | Parallel |