HI5812JIBZ vs HI5812KIBZ 对比
详细并排对比 HI5812JIBZ 出自 Renesas Electronics 和 HI5812KIBZ 出自 Renesas Electronics。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况，以确定最适合您设计需求的元器件。
规格对比
| 参数 | HI5812JIBZ | HI5812KIBZ |
|---|---|---|
| 品牌 | Renesas Electronics | Renesas Electronics |
| 分类 | ADC/DAC | ADC/DAC |
| 生命周期状态 | 有效 | 有效 |
| 库存状态 | 有库存 | 有库存 |
| 单价（USD） | $3.18 | $7.05 |
| 分辨率 | 12 bit | 12 bit |
| Architecture | SAR (Successive Approximation) with internal Track-and-Hold | CMOS, charge-redistribution SAR |
| Number of Channels | 1 single-ended input | 1 |
| Sample Rate | 50 kSPS (max) | — |
| Conversion Time | 20 us (typical) | 20 us |
| 输入电压范围 | 0 V to VREF (unipolar) | — |
| Reference Voltage (VREF) | [DATA_NEEDED: VREF max] | — |
| Integral Linearity Error (INL) | 1.5 LSB (max) | — |
| Analog Supply Voltage (VDD) | +5 V | — |
| Digital Interface | Parallel, user-selectable 12-bit / 8-bit MSB / 4-bit LSB | — |
| 输出类型 | Three-state CMOS, latched across one full conversion | — |
| Control Inputs/Outputs | CONVERT_START (input), DATA_READY (flag) | — |
| Internal Clock | On-chip oscillator | — |
| Power Dissipation | 25 mW | — |
| 工作温度范围 | -40 C to +85 C | — |
| Package / Mounting | 24-pin SOIC (wide body), surface mount | — |
| Process Technology | High-speed CMOS with thin-film DAC | — |
| RoHS 状态 | Compliant | Compliant |
| Converter Type | — | SAR (Successive Approximation) |
| 采样率 | — | 50 ksps |
| 电源电压 | — | 3 V to 6 V (single supply) |
| Supply Current (typical) | — | 1.9 mA |
| Input Type | — | Single-Ended |
| Track-and-Hold | — | Internal |
| Data Interface | — | Parallel (12-bit) |
| 封装 | — | 24-SOIC (0.295 inch, 7.50 mm width) |
| 安装类型 | — | Surface Mount |
| 工作温度 | — | [DATA_NEEDED: operating temperature range] |
| Lead-Free | — | Yes |
| INL (typical) | — | [DATA_NEEDED: INL max in LSB] |
| DNL | — | [DATA_NEEDED: DNL max in LSB] |